PB5C5JW UNIKC | Alldatasheet

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Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 1 : S1. 4 : S2. 2 : G1. 5 : G2. 3 : D2. 6 : D1. PDFN 2X2S 100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. ID Pulsed Drain Current1 Continuous Drain Current Power Dissipation PD TA = 70 ° C TA= 70 ° C TA = 25 ° C TJ, Tstg RqJA ID TA = 25 ° C -20V PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 85mΩ @VGS = -4.5V -3.1A Gate-Source Voltage Junction-to-Ambient2 THERMAL RESISTANCE MAXIMUM UNITS TYPICAL VDS -20 V SYMBOL IDM VGS LIMITS ± 12 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 V 1.3 -3.1 -12 W0.85 -2.5 A REV 1.0 1 2018/8/31

Dual P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.5 -0.9 -1.2 ± 30 mA -10 61 85 86 135 13 S 432 7.2 Ω 5.5 3.4 0.8 1.9 8.7 -1.1 A -1.2 V 10 nS 4.2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Qgd Input Capacitance VGS = 0V, VDS = -10V, f = 1MHz PARAMETER Output Capacitance VDS = -10V, VGS = 0V, TJ = 55 ° C SYMBOL Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=-4.5V) Qg(VGS=-2.5V) Crss Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = -10V , ID = -2.5A Gate-Drain Charge2 IF = -2.5A, VGS = 0V nSVDD= -10V, ID @ -2.5A, VGEN = -4.5V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = -16V, VGS = 0V pF IDSS Forward Transconductance1 Ciss VDS = -5V, ID = -2.5A VDS = 0V, VGS = ± 10V gfs RDS(ON) LIMITS VGS = -2.5V, ID = -2A STATIC IF = -2.5A, dlF/dt = 100A / mS UNITS Coss VGS = -4.5V, ID = -2.5A V(BR)DSS Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = -250mA VGS = 0V, ID = -250mA Gate-Body Leakage VGS(th) TEST CONDITIONS REV 1.0 2 2018/8/31

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Dual P-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：C8) B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2018/8/31

Dual P-Channel Enhancement Mode MOSFET REV 1.0 7 2018/8/31

Dual P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2018/8/31