PB5A2BA UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% RG Test PDFN 2X2S 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. ID Pulsed Drain Current1 Continuous Drain Current Power Dissipation PD TA = 70 ° C TJ, Tstg RqJA TA= 70 ° C 9 ID TA = 25 ° C 20V PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 9mΩ @VGS = 4.5V 11A Gate-Source Voltage Junction-to-Ambient2 THERMAL RESISTANCE TA = 25 ° C MAXIMUM UNITS TYPICAL VDS 20 V SYMBOL IDM VGS LIMITS Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 V W1.3 A REV 1.0 1 2015/8/12
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.45 0.65 0.9 ± 100 nA 6.5 9 7.9 11 10.5 15 93 S 1547 227 203 2.4 Ω 1.1 7.8 1.5 A 1.3 V 9.1 nS 2.2 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Input Capacitance VGS = 0V, VDS = 10V, f = 1MHz PARAMETER Output Capacitance VGS = 1.8V , ID = 9A VDS = 10V, VGS = 0V, TJ = 55 ° C SYMBOL Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=4.5V) Qg(VGS=2.5V) Crss Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = 10V , ID = 11A trr IF =11A, VGS = 0V nSVDD= 10V, ID @ 11A, VGEN = 4.5V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Qgd pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 STATIC VGS = 2.5V, ID = 9A nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 16V, VGS = 0V Ciss VDS = 10V, ID = 18A VDS = 0V, VGS = ± 8V gfs RDS(ON) LIMITS IF = 11A, dlF/dt = 100A / mS UNITS Coss VGS = 4.5V, ID = 11A V(BR)DSS Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) TEST CONDITIONS REV 1.0 2 2015/8/12
N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/8/12
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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：C4) B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2015/8/12
N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/8/12
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/8/12