PB555BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe,in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. PDFN 2X2S Steady-State t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 RqJA 65 ° C / W RqJA ID ID TA = 25 ° C -30V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 25mΩ @VGS = -10V -8A Drain-Source Voltage Power Dissipation3 Tj, Tstg TA= 25 ° C THERMAL RESISTANCE TYPICAL PD UNITS -6.4 1.7 -30 ± 20 V 2.7 SYMBOL Pulsed Drain Current1 A VGS VDS W Gate-Source Voltage IDM SYMBOL LIMITS TA= 70° C Operating Junction & Storage Temperature Range MAXIMUM °C-55 to 150 REV 1.1 1 2015/9/24

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -0.8 -1.7 -2.5 ± 100 nA -10 18 25 29 40 22 S 920 133 115 13 Ω -2.7 A -1 V 11 nS 3.8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Total Gate Charge2 Qg(VGS=-4.5V) Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz SYMBOL pF Gate-Body Leakage Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -6A VDS = -5V, ID = -6A UNITS mΩ Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = -250mA VDS = -15V ,ID = -6A VGS(th) Forward Transconductance1 VDS = -20V, VGS = 0V, TJ = 55° C VGS = -10V, ID = -6A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance CissInput Capacitance Turn-Off Delay Time2 Fall Time2 Output Capacitance Qg(VGS=-10V) V(BR)DSS VSD trr IF = -6A, VGS = 0V td(off) tf Turn-On Delay Time2 Rise Time2 nCQgs TEST CONDITIONSPARAMETER Qgd gfs QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time nSVDD = -15V ID @ -6A, VGEN = -10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr IS VDS = -24V, VGS = 0V STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = -15V, f = 1MHz mA DYNAMIC IF = -6A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = -250mA Rg REV 1.1 2 2015/9/24

P-Channel Enhancement Mode MOSFET REV 1.1 3 2015/9/24

P-Channel Enhancement Mode MOSFET REV 1.1 4 2015/9/24

P-Channel Enhancement Mode MOSFET REV 1.1 5 2015/9/24

P-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：B8) B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2015/9/24

P-Channel Enhancement Mode MOSFET REV 1.1 7 2015/9/24

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/9/24