PB554DY UNIKC | Alldatasheet
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Dual Common Drain N-Channel MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X5 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 9.5A. RqJAJunction-to-Ambient2 UNITS 9.8 ± 10 V LIMITS A IAS VGS IDM -55 to 150 mJ 1.3 TYPICAL Pulsed Drain Current1 TA = 25 ° C Continuous Drain Current3 Avalanche Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 10mΩ @VGS = 4.5V Avalanche Energy THERMAL RESISTANCE Junction & Storage Temperature Range 12A ID 20V TA = 25 ° C SYMBOL VDS L = 0.1mH EAS PDPower Dissipation SYMBOL TJ, Tstg W ID MAXIMUM TA = 70 ° C REV 1.7 1 2015/3/3
Dual Common Drain N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.35 0.7 1 ± 30 mA 6.5 7.5 10 6.6 7.6 12 7 8 12.5 7.5 8.5 13 30 S 1735 283 245 1.6 A 1.2 V 19 nS 10 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. TEST CONDITIONS VGS(th) SYMBOL V(BR)DSS Gate Threshold Voltage VDS = 10V, VGS = 0V , TJ = 125 ° C STATIC LIMITS UNITS V IGSSGate-Body Leakage Drain-Source Breakdown Voltage nC Reverse Transfer Capacitance VGS = 0V, VDS = 10V, f = 1MHz VGS = 0V, ID = 250mA gfs pF VDS = 16V, VGS = 0V VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 8V Zero Gate Voltage Drain Current Input Capacitance IF = 3A, VGS = 0V Output Capacitance Total Gate Charge2 IS Fall Time2 DYNAMIC mA mΩ Qgd Qgs Gate-Drain Charge2 Gate-Source Charge2 Ciss Coss Crss Reverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Reverse Recovery Time Forward Voltage1 tf Forward Transconductance1 VDS = 5V, ID = 3A nSVDD = 10V ID @ 3A, VGS = 4.5V, RGS = 6Ω td(on) tr td(off) VGS = 4.5V, ID = 3A IDSS IF = 3A, dlF/dt = 100A / mSQrr trr VSD Qg VDS = 10V, ID = 3A VGS = 4.5V VGS = 3.9V, ID = 3A VGS = 3.1V, ID = 2A Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V, ID = 2A PARAMETER REV 1.7 2 2015/3/3
Dual Common Drain N-Channel MOSFET REV 1.7 3 2015/3/3
Dual Common Drain N-Channel MOSFET REV 1.7 4 2015/3/3
Dual Common Drain N-Channel MOSFET REV 1.7 5 2015/3/3