PB544DU UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. °C-55 to 150 MAXIMUM Junction-to-Ambient2 54 IDM SYMBOL LIMITS A VVGS VDS V W UNITS 8.2 14.4 mJ 1.4 Drain-Source Voltage TA= 25 ° C ID TA = 25 ° C 20V Continuous Drain Current TA = 70° C PARAMETERS/TEST CONDITIONS RDS(ON) 13.5mΩ @VGS = 10V 10A Avalanche Current IAS 17 EAS THERMAL RESISTANCE TYPICAL 2.3 Junction & Storage Temperature Range SYMBOL Avalanche Energy3 Gate-Source Voltage ID PD Pulsed Drain Current1 TA= 70 ° CPower Dissipation Tj, Tstg RqJA REV 1.0 1 2013-12-16
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.35 0.8 1 ± 30 uA 12.5 13.5 15.5 18 1184 135 108 12.8 1.7 3.6 1.9 A 1.2 V 11 nS 3.8 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. IF = 4A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 8V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS VSD trr pF STATIC Drain-Source Breakdown Voltage V nCQgs mA DYNAMIC VDS = 16V, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IF = 4A, VGS = 0V nSVDD = 10V, ID @ 4A, VGS = 4.5V, RGS= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VGS = 4.5 V, VDS = 10V, ID = 4A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 CissInput Capacitance Qgd Output Capacitance Qg Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 10V, VGS = 0V, TJ = 125 ° C PARAMETER Gate-Body Leakage VGS(th) VGS = 2.5V, ID = 3.5A Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = 4.5V, ID = 4A SYMBOL UNITS VGS = 0V, VDS = 10V, f = 1MHz REV 1.0 2 2013-12-16
N-Channel Enhancement Mode MOSFET REV 1.0 3 2013-12-16