PB521BX UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. Pulsed Drain Current1 MAXIMUM Junction-to-Ambient2 SYMBOL °C-55 to 150 A VGS VDS W UNITS -6.4 1.4 -20 ±8 V 2.1TA= 25 ° C THERMAL RESISTANCE TYPICAL PD TA= 70° C Operating Junction & Storage Temperature Range Power Dissipation Tj, Tstg PARAMETERS/TEST CONDITIONS RDS(ON) 21mΩ @VGS = -4.5V -7.4A Drain-Source Voltage ID TA = 25 ° C -20V Continuous Drain Current TA= 70 ° C IDM SYMBOL LIMITS Gate-Source Voltage ID PDFN 2X2S RqJA 57 REV 1.3 1 2018/3/30

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.45 -0.6 -0.85 ± 100 nA -10 24 40 19 28 15 21 21 S 1727 179 155 10 Ω 1.8 4.9 -1.7 A -1.2 V 35 nS 18 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = -2.5A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 8V IDSS Coss Crss LIMITS IS VDS = -16V, VGS = 0V STATIC Drain-Source Breakdown Voltage V VGS = 0V, ID = -250mA QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time nSVDD = -10V ID @ -2.5A, VGEN = -4.5V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nCQgs TEST CONDITIONSPARAMETER VSD trr IF = -2.5A, VGS = 0V td(off) tf Turn-On Delay Time2 Rise Time2 Fall Time2 Output Capacitance Qg V(BR)DSS td(on) Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VGS = -2.5V, ID = -2A Turn-Off Delay Time2 tr Rg DYNAMIC VGS = 0V, VDS = -10V, f = 1MHz VDS = -10V, ID = -2.5A Qgd gfs Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = -250mA VDS = -10V , VGS = -4.5V, ID = -2.5A mA Total Gate Charge2 Gate-Body Leakage VGS(th) Forward Transconductance1 VDS = -10V, VGS = 0V, TJ = 55° C VGS = -1.8V, ID = -1A Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -2.5A mΩ UNITS Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz SYMBOL pF Input Capacitance REV 1.3 2 2018/3/30

P-Channel Enhancement Mode MOSFET REV 1.3 3 2018/3/30

P-Channel Enhancement Mode MOSFET REV 1.3 4 2018/3/30

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P-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：B7) B. Tape&Reel Information:3000pcs/Reel REV 1.3 6 2018/3/30

P-Channel Enhancement Mode MOSFET REV 1.3 7 2018/3/30

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.3 8 2018/3/30