PB210BI UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. Avalanche Energy L = 0.1 mH 3.5 °C-55 to 150 MAXIMUM Junction-to-Case IDM SYMBOL LIMITS A VVGS VDS V 36 W UNITS 14 mJ 100 ± 20 Drain-Source Voltage TC = 25 ° C ID TC = 25 ° C 100V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 230mΩ @VGS = 10V 9A Pulsed Drain Current1,2 Avalanche Current IAS 16 EAS THERMAL RESISTANCE TYPICAL Gate-Source Voltage ID PD TC = 100 ° CPower Dissipation Tj, TstgOperating Junction & Storage Temperature Range SYMBOL RqJC REV 1.0 1 2014-3-6

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.4 2 ± 100 nA 14 A 213 240 204 230 15 S 647 1.8 Ω 15.6 9 A 1.4 V 40 nS 53 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. On-State Drain Current1 ID(ON) VDS = 5V, VGS = 5V Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 6A IF = 6A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA Rg pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz mΩ nCQgs mA DYNAMIC VDS = 80V, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 6A, VGS = 0V nSVDS = 0.5V(BR)DSS, ID @ 6A, VGS = 10V, RGEN =6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 5V, ID = 6A Input Capacitance Qgd Output Capacitance Qg Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 80V, VGS = 0V, TJ = 70° C PARAMETER Gate-Body Leakage VGS(th) Forward Transconductance1 VGS = 5V, ID = 6A SYMBOL UNITS Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz REV 1.0 2 2014-3-6

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014-3-6

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014-3-6

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-3-6