PB210BD

PB210BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. VGS ° C / W THERMAL RESISTANCE V± 20 RqJC 62.5 Power Dissipation Junction-to-Ambient PD TJ, TSTG TC = 25 ° C TC = 100 ° C SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 230mΩ @VGS = 10V 10A ID 100V Continuous Drain Current Operating Junction & Storage Temperature Range TYPICALSYMBOL Junction-to-Case IDMPulsed Drain Current1 LIMITS -55 to 150 W UNITS mJAvalanche Engergy L = 0.1 mH Avalanche Current IAS 18 A TC = 25 ° C ID EAS 16.5 MAXIMUM RqJA Rev 1.2 1 2014/5/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.0 1.5 2.0 ± 100 nA 40 A 203 240 191 230 10 S 802 1002 80 100 41 51 2.5 3.1 Ω 330 111 10 A 1.4 V 75 nS 0.17 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. STATIC nC mΩ TEST CONDITIONS nSVDD = 50V, ID@ 6A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tfFall Time2 Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) LIMITS UNIT Gate Threshold Voltage IS Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz VSD Total Gate Charge2 IF = 6A, VGS = 0V Input Capacitance Output Capacitance Gate Resistance ID(ON) VDS = 10V, VGS = 10V Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 6A DYNAMIC pF Ciss Coss Qg VDS = 50V, VGS = 10V, ID = 6A Qgd Qgs Crss Rg VGS = 0V, VDS = 0V, f = 1MHZ Drain-Source Breakdown Voltage VGS = 5V, ID = 6A VDS = 10V, ID = 6A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current1 V IGSS IDSS gfs VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V mA PARAMETER SYMBOL Reverse Recovery Time Reverse Recovery Charge trr IF = 6A, dl/dt = 500A / msQrr Rev 1.2 2 2014/5/23

N-Channel Enhancement Mode MOSFET Rev 1.2 3 2014/5/23

N-Channel Enhancement Mode MOSFET Rev 1.2 4 2014/5/23

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 Rev 1.2 5 2014/5/23