PA910BM UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. Power Dissipation3 ± 20 W ° C / W V UNITS 1.3 MAXIMUM A RqJA RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 190mΩ @VGS = 10V 1.6A ID 100V Continuous Drain Current TA = 25 ° C Pulsed Drain Current1 THERMAL RESISTANCE SYMBOL 100 TA = 25 ° C IDM TYPICAL 0.8 1.25 -55 to 150 SYMBOL VGS 1.6ID LIMITS TA = 70 ° C RqJA Operating Junction & Storage Temperature Range TJ, TSTG PD 147 t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State Rev 1.0 1 2018/7/31

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.9 2.3 ± 100 nA 148 190 159 205 7 S 301 2.3 Ω 8.1 0.9 3.1 0.9 A 1.4 V 17.8 nS 8.8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time trr IF = 1.6A, dlF/dt = 100A/mS Reverse Recovery Charge Qrr STATIC V IGSS IDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS mA LIMITS UNITS pF TEST CONDITIONS Coss DYNAMIC Crss VGS = 0V, VDS = 25V, f = 1MHz Gate Threshold Voltage VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 100 ° C VDS = VGS, ID = 250mAVGS(th) VDS = 0V, VGS = ± 20V Ciss mΩ PARAMETER SYMBOL Forward Transconductance1 VDS = 5V, ID = 1.6A RDS(ON) gfs Zero Gate Voltage Drain Current VDD = 50V, ID @ 1.6A, VGEN = 10V, RGS = 6Ω Qgs Qgd VDS = 50V, VGS = 10V, ID = 1.6A Rg Gate-Body Leakage Drain-Source On-State Resistance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance td(off) tf nC Total Gate Charge2 Gate-Source Charge2 nS Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Qg IF = 1.6A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 VGS = 0V, VDS = 0V, f = 1MHz tr Gate-Drain Charge2 Gate Resistance VGS = 10V, ID = 1.6A VGS = 4.5V, ID = 1.6A td(on) Rev 1.0 2 2018/7/31

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N-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：7K ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 Rev 1.0 6 2018/7/31

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) Rev 1.0 8 2018/7/31