PA610DD

PA610DD UNIKC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. -100 V A -12 -10 UNITS -28 ± 30 LIMITS ID Pulsed Drain Current1 Avalanche Energy L = 1mH EAS MAXIMUM °C-55 to 150 mJ W TYPICAL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 200mΩ @VGS = -10V -10A ID -100V Continuous Drain Current SYMBOL VDS IAS TC = 25 ° C Avalanche Current VGS IDM RqJC 3.5 Power Dissipation TC = 100 ° C Junction-to-Case THERMAL RESISTANCE SYMBOL PD TJ, TSTG TC = 25 ° C Operating Junction & Storage Temperature Range REV1.2 1 2014/6/16

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -100 -2.0 -3.2 -4.0 ± 100 nA -28 A 176 200 mΩ 13 S 1530 100 4.6 Ω 27.6 8.6 9.2 -10 A -1.2 V 67.2 nS 186 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = -10V, VGS = -10V VDS = -80V, VGS = 0V , TC = 125 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage V STATIC VDS = -80V, VGS = 0VIDSS mA V(BR)DSS VGS = 0V, VDS = -25V, f = 1MHz Reverse Transfer Capacitance gfs DYNAMIC VDD = 0.5V(BR)DSS, VGS = -10V, ID = -10A Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Zero Gate Voltage Drain Current Gate-Body Leakage Drain-Source On-State Resistance1 Crss Coss On-State Drain Current1 ID(ON) RDS(ON) IGSS IF = -10A, VGS = 0V trr Forward Voltage1 nC Drain-Source Breakdown Voltage VGS = -10V, ID = -10A VDS = -10V, ID = -10A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mA Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDS = -50V, ID @ -10A, VGS = -10V, RGEN = 6Ω td(on) tr LIMITS UNITSPARAMETER SYMBOL TEST CONDITIONS td(off) tf Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Qg Fall Time2 Qgd Qgs Reverse Recovery Time IS VSD IF = -10A, dlF/dt = 100A / mS Reverse Recovery Charge pF Input Capacitance Output Capacitance Ciss Qrr REV1.2 2 2014/6/16

P-Channel Enhancement Mode MOSFET REV1.2 3 2014/6/16

P-Channel Enhancement Mode MOSFET REV1.2 4 2014/6/16

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV1.2 5 2014/6/16