PA504EM UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper -1.5 Junction-to-Ambient2 Pulsed Drain Current1 W UNITS -1.1 ± 20 V -55 to 150 A LIMITS ID IDM TYPICAL 0.3 0.5 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 150mΩ @VGS = -10V VGS -1.5A ID -40V SYMBOL TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current TA = 25 ° C PD Operating Junction & Storage Temperature Range SYMBOL RqJA TJ, TSTG 220 MAXIMUMTHERMAL RESISTANCE Ver 1.0 1 2012/6/27

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -40 -1.30 -1.8 -3 ± 100 nA -10 -8 A 170 250 120 150 4 S 235 5.1 1.7 -0.5 A -1.1 V 13 nS 7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Forward Voltage1 VSD IF = -1.5A, VGS = 0V Reverse Recovery Time trr IF = -3A, dlF/dt=100A/mS Reverse Recovery Charge Qrr VDS = -30V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V VGS(th) VGS = 0V, ID = -250mA Gate Threshold Voltage DYNAMIC V IGSS IDSS mA Drain-Source Breakdown Voltage VGS = -4.5V, ID = -1.2A VDS = -10V, VGS = -4.5V V(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage STATIC LIMITS UNITSYMBOL TEST CONDITIONS Gate-Source Charge2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance1 VDS = -32V, VGS = 0V On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Ciss nC nS Qgs Qgd td(on) Total Gate Charge2 tf Gate-Drain Charge2 Continuous Current IS Turn-On Delay Time2 VDD = -20V ID @ -1.5A, RG = 6Ωtd(off) VGS = 0V, VDS = -20V, f = 1MHzCoss RDS(ON) VGS = -10V, ID = -1.5A tr Crss gfs Rise Time2 Turn-Off Delay Time2 pF Qg PARAMETER mΩ VDS = -5V, ID = -1.5A VDS = 0.5V(BR)DSS, VGS = -10V, ID = -1.5A Ver 1.0 2 2012/6/27

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/6/27

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/6/27

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/6/27