PA410BTF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. IAS -55 to 150 MAXIMUM VGS Pulsed Drain Current1 Avalanche Current Junction-to-Case ° C / W 9.8 Avalanche Energy PD UNITS ID IDM SYMBOL ± 20 LIMITS A mJ 4.8 W RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 140mΩ @VGS = 10V 10A ID 100V Continuous Drain Current RqJC RqJA 4.2 62.5 Junction & Storage Temperature Range SYMBOLTHERMAL RESISTANCE TYPICAL Power Dissipation TC = 25 ° C Tj, Tstg EASL = 0.1mH Drain-Source Voltage VDS 100 V TC = 25 ° C TC = 100 ° C Junction-to-Ambient REV 1.0 1 2017/1/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 105 170 95 140 13 S 333 1.1 10 A 1.1 V 29 nS 33 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. RDS(ON) mΩ Total Gate Charge2 IF = 5A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) Drain-Source On-State Resistance1 pF VDS = 80V, VGS = 0V IGSS IDSS VDS = 0V, VGS = ± 20V Ciss VVDS = VGS, ID = 250mA VDS = 80V, VGS = 0V , TJ = 125 ° C V(BR)DSS VGS = 0V, ID = 250mA SYMBOL Zero Gate Voltage Drain Current Gate-Body Leakage Qgs gfs DYNAMIC VGS = 4.5V, ID = 5A mA VDS = 50V,VGS = 10V, ID = 5A nC Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 10V, ID = 5A VDS = 10V, ID = 5A Qgd Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 5A, VGS = 0V nSVDS = 50V, ID @ 5A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 STATIC LIMITS UNITSPARAMETER Qg TEST CONDITIONS REV 1.0 2 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/19

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/19

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/19

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/19