PA410BIS UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Avalanche Energy L = 0.1mH Junction-to-Ambient RqJA 62.5 ° C / W TYPICAL °C-55 to 150Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current TC = 25 ° C 100V Pulsed Drain Current1 140mΩ @VGS = 10V 10A Drain-Source Voltage 10Avalanche Current WPower Dissipation EAS 35TC = 25 ° C TC = 100 ° C PD TJ, TSTG A SYMBOL VGS mJ V 3.5 LIMITS UNITS VDS 100 ID IAS IDM ± 20 REV 1.0 1 2017/2/9

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.9 2.3 ± 100 nA 103 170 93 140 13 S 332 8.8 1.5 3.9 10 A 1.1 V 26 nS 27 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 trr Qrr IS VSD IF = 5A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current Forward Voltage1 Turn-On Delay Time2 Rise Time2 Reverse Recovery Time Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDS = 50V, ID @ 5A, VGS = 10V, RGEN = 6Ωtd(off) tf td(on) tr IF = 5A, VGS = 0V VDS = 80V, VGS = 0V V STATIC LIMITS UNITSPARAMETER SYMBOL nC VDS = 10V, ID = 5AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg VDS = 50V, ID = 5A ,VGS = 10VGate-Source Charge2 Gate-Drain Charge2 Qgs Reverse Transfer Capacitance Total Gate Charge2 Qgd gfs RDS(ON) VGS = 4.5V, ID = 5A mA mΩ IGSS IDSS Gate-Body Leakage VDS = 80V, VGS = 0V , TJ = 125 ° C VGS = 10V, ID = 5A VGS(th) Zero Gate Voltage Drain Current TEST CONDITIONS VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS REV 1.0 2 2017/2/9

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2017/2/9

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/9