PA410BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. RqJC RqJA 62.5 ° C / W TC = 100 ° CPower Dissipation Tj, Tstg Gate-Source Voltage L =0.1mH ID PD Pulsed Drain Current1 Avalanche Current IAS 10 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL Junction-to-Ambient ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 140mΩ @VGS = 10V 10A Drain-Source Voltage TC = 25 ° C 35 W UNITS 5 mJ 100 ± 20 IDM SYMBOL LIMITS A VVGS VDS V Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM Junction-to-Case 3.5 REV 1.2 1 2015/7/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.9 2.3 ± 100 nA 103 170 93 140 13 S 330 8.6 1.2 3.5 10 A 1.1 V 25 nS 25 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. SYMBOL UNITS mΩ VGS = 4.5V, ID = 5A VGS = 0V, VDS = 25V, f = 1MHz Gate-Body Leakage VGS(th) Forward Transconductance1 VGS = 10V, ID = 5A Drain-Source On-State Resistance1 RDS(ON) Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 80V, VGS = 0V, TJ = 125 ° C PARAMETER Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 10V, ID = 5A Input Capacitance Qgd Output Capacitance Qg gfs VGS = 10 V, VDS = 50V, ID = 5A td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VSD trr IF = 5A, VGS = 0V nSVDS = 50V, ID @ 5A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr nCQgs mA DYNAMIC VDS = 80V, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time pF STATIC Drain-Source Breakdown Voltage V IF = 5A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS REV 1.2 2 2015/7/29

N-Channel Enhancement Mode MOSFET REV 1.2 3 2015/7/29

N-Channel Enhancement Mode MOSFET REV 1.2 4 2015/7/29

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2015/7/29

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.2 6 2015/7/29

N-Channel Enhancement Mode MOSFET REV 1.2 7 2015/7/29

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2015/7/29