PA002FMA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1limited by maximum junction temperature. Drain-Source Voltage VDS -20 V 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air environment with TA =25° C. W UNITS -20 -2.4 A VGS LIMITS ID IDM TYPICAL 0.6 0.9 MAXIMUM Pulsed Drain Current1 THERMAL RESISTANCE 100mΩ @VGS = -4.5V TA = 25 ° C -3A SYMBOL ID -20V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage SYMBOL °C-55 to 150 RqJA 130Junction-to-Ambient2 PD TJ, TSTGJunction & Storage Temperature Range REV 1.0 1 2014/7/9

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.3 -0.5 -1 ± 100 nA -10 140 190 109 130 80 100 -20 A 8.1 S 434 6.3 0.7 9.4 -3 A -1.2 V 11 nS 3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩ On-State Drain Current1 ID(ON) VDS =-5V, VGS = -4.5V Reverse Recovery Time trr IF = -2.5A, dlF/dt = 100A /mS Reverse Transfer Capacitance V IGSS IDSS Drain-Source On-State Resistance1 RDS(ON) VGS = -1.8V, ID = -1A VDS = 0V, VGS = ± 8V mAVDS = -10V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = -250mA Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = -16V, VGS = 0V Gate Threshold Voltage SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = -10V, f = 1MHz VGS = -2.5V, ID = -2A Zero Gate Voltage Drain Current V(BR)DSS Total Gate Charge2 Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance VGS(th) VGS = 0V, ID = -250mA PARAMETER TEST CONDITIONS Gate-Source Charge2 VGS = -4.5V, ID = -2.5A STATIC LIMITS UNIT nC nS tf VDS = -5V, ID = -2.5A VDS = -10V,VGS =-4.5V, ID= -2.5A pF Crss Rise Time2 IF = -2.5A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) VDS = -10V ID @ -2.5A, VGS= -4.5V, RGEN = 6ΩTurn-Off Delay Time2 Qg Fall Time2 Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 REV 1.0 2 2014/7/9

P-Channel Enhancement Mode MOSFET REV 1.0 3 2014/7/9

P-Channel Enhancement Mode MOSFET REV 1.0 4 2014/7/9

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/7/9