P9006EVG UNIKC | Alldatasheet
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Ver 1.0 1 2012/7/17 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -4.5A RDS(ON) ID -60V 90mΩ @VGS = -10V SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) ( ) TA = 70 °C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25 °C ID IDM SYMBOL VGS VDS Pulsed Drain Current1 UNITS -20 -3.5 -4.5 ±20 -60 LIMITS V A THERMAL RESISTANCE RATINGS UNITSMAXIMUM Operating Junction & Storage Temperature Range TA = 25 °C TA = 70 °C Power Dissipation SYMBOL PD TJ, TSTG TYPICAL 1.6 2.5 W THERMAL RESISTANCE °C-55 to 150 UNITS °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1%. U RθJAJunction-to-Ambient SO CSS C Ver 1.0 1 2012/7/17
Ver 1.0 2 2012/7/17 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX TEST CONDITIONS STATIC LIMITS UNITPARAMETER SYMBOL -60 -1.0 -1.5 -2.5 ±250 nA -20 A VDS = -48V, VGS = 0V V 45 V I 35 A V VGS = 0V, ID = -250μAV(BR)DSS Gate-Body Leakage VDS = -5V, VGS = -10VID(ON)On-State Drain Current1 IDSS VDS = -36V, VGS = 0V , TJ = 125 °C VDS = VGS, ID = -250μA VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current μA IGSS Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) 90 150 70 90 760 mΩDrain-Source On-State Resistance1 VGS = -10V, ID = -4.5ARDS(ON) VGS = -4.5V, ID = -3.5A DYNAMIC Ciss VGS = 0V, VDS = -30V, f = 1MHz pFOutput Capacitance Coss Forward Transconductance1 gfs VDS = -10V, ID = -4.5A Input Capacitance RT f C i t C 40 15.0 2.5 3.0 71 4 10 20 19 34 Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, ID = -4.5A, VGS = -10V Turn-On Delay Time2 td(on) VDS = -20V, ID ≅ -1A V GS = -10V R GS=6 Ω nSRise Time2 tr Turn Off Delay Time2 t nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Reverse Transfer Capacitance Crss 19 34 12 22 -1.3 -2.6 -1 V 15 5 nSReverse Recovery Time t tf Forward Voltage1 VSD IF = Is, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS A ID ≅ -1A, VGS = -10V, RGS= 6ΩTurn-Off Delay Time2 td(off) Fall Time2 Pulsed Current3 ISM 15.5 nS 7.9 nC 1Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. IF = -3.5A, dlF/dt = 100A / μSReverse Recovery Time Reverse Recovery Charge trr Qrr Ver 1.0 2 2012/7/17
Ver 1.0 3 2012/7/17 P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/7/17
Ver 1.0 4 2012/7/17 P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/7/17
Ver 1.0 5 2012/7/17 P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/7/17