P9006ETF

P9006ETF UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited by package. Junction-to-Case RqJC RqJAJunction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL W RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 90mΩ @VGS = 10V TC = 25 ° C TC = 100 ° C Power Dissipation -15A ID Drain-Source Voltage -60 Continuous Drain Current1 °C-55 to 150 ° C / W -60 -9.5 -24 A -60 mJ V SYMBOL -15 LIMITS ± 20 ID VGS VDS UNITS TC = 25 ° C IDM L = 0.1mH IASAvalanche Current Pulsed Drain Current2 TJ, TSTG THERMAL RESISTANCE TYPICAL PD 3.6 MAXIMUM EASAvalanche Energy Ver 1.0 1 2012/4/16

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -60 -1.0 -1.8 -3.0 ± 250 nA -60 A 79 135 63 90 20 S 1130 129 4.85 Ω 22.0 4.6 5.5 120 -15 A -1.3 V 71 nS 254 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -6A mΩ TEST CONDITIONSPARAMETER Drain-Source Breakdown Voltage VGS = -10V, ID = -18A V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nC pF Gate Resistance Rg Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance IF = -18A, VGS = 0V nS VDS = -30V, ID @ -18A, VGS = -10V, RGS = 6Ω td(on) tr td(off) tf QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr VDS = -5V, ID = -18A VGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = -48V, VGS = 0V VDS = VGS, ID = -250mA VDS = -40V, VGS = 0V , TJ = 125 ° C Qg VDS = 0.5V(BR)DSS, VGS = -10V, ID = -18A Ciss Coss Crss Qgd Qgs ID(ON) VDS = -5V, VGS = -10V mA STATIC LIMITS UNIT VDS = 0V, VGS = ± 20V IDSS DYNAMIC SYMBOL On-State Drain Current1 IGSS IF = -18A, dlF/dt = 100A / μS Gate Threshold Voltage VGS = 0V, VDS = -25V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz Rise Time2 gfs Ver 1.0 2 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16