P8315ATF UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 ° C,IAS=17A,L=1.1mH,VDD=50V Junction & Storage Temperature Range SYMBOL °C-55 to 150 3.6 UNITS 8.5 TYPICAL ID IDM SYMBOL A 13.5 LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 35PD Junction-to-Ambient RqJA 62.5 Junction-to-Case THERMAL RESISTANCE ID Tc = 25 ° C 150V Continuous Drain Current Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 83mΩ @VGS = 10V 13.5A Drain-Source Voltage Gate-Source Voltage 163 ± 30 ° C / W Pulsed Drain Current1 TC = 100 ° CPower Dissipation TJ, Tstg Avalanche Energy2 VDS 150 W mJ RqJC VGS V REV 1.0 1 2014/7/9
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 2 3 4 ± 100 nA 64 83 68 88 15 S 1290 208 41.7 6.7 20.7 13.5 A 1.6 V 122 nS 620 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. TEST CONDITIONS IF=10A,dlF/dt = 100A / μS UNITS Coss Crss Drain-Source On-State Resistance1 gfsForward Transconductance1 STATIC Drain-Source Breakdown Voltage V RDS(ON) VGS = 10V, ID = 10A mΩ nCQgs mA DYNAMIC VDS = 120V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDD = 75V , ID @ 10A, VGS = 10V, RGEN =6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Ciss PARAMETER VDS = 100V, VGS = 0V, TJ = 125 ° C VDS = 0V, VGS = ± 30V Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) LIMITS Input Capacitance VGS = 0V, VDS = 25V, f = 1MHzOutput Capacitance Qg VGS = 10V, VDS = 75V,ID = 10A Gate-Drain Charge2 Gate-Source Charge2 SYMBOL VGS = 7V , ID = 10A Reverse Transfer Capacitance VDS = 10V, ID = 10A Total Gate Charge2 V(BR)DSS REV 1.0 2 2014/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/7/9