P8010BIS UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. IDM ± 20 TYPICAL °C-55 to 150Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current TC = 25 ° C 100V Pulsed Drain Current1 85mΩ @VGS = 10V 15A Drain-Source Voltage 7.2 12Avalanche Current Avalanche Energy WPower Dissipation EAS 46TC = 25 ° C TC = 100 ° C PD TJ, TSTG A SYMBOL VGS mJ V 2.7 LIMITS UNITS L = 0.1mH VDS 100 ID IAS REV 1.0 1 2015/3/30

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 35 A 67 95 61 85 25 S 527 1.5 Ω 18.5 2.7 5.1 15 A 1.1 V 33 nS 35 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. trr Qrr IS VSD IF = 15A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current Forward Voltage1 Turn-On Delay Time2 Rise Time2 Reverse Recovery Time Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDS = 40V, ID @ 15A, VGS = 10V, RGEN =6Ωtd(off) tf td(on) tr IF = 15A, VGS = 0V TEST CONDITIONS gfs VDS = 80V, VGS = 0V V STATIC LIMITS UNITSPARAMETER SYMBOL nC VDS = 5V, ID = 15AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg VGS = 10V, VDS = 0.5V(BR)DSS, ID = 15AGate-Source Charge2 Gate-Drain Charge2 Qgs Gate Resistance Reverse Transfer Capacitance Total Gate Charge2 Qgd Rg VGS = 0V, VDS = 0V, f = 1MHz Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A mA mΩ IGSS IDSS Gate-Body Leakage VDS = 80V, VGS = 0V , TJ = 125 ° C VGS = 10V, ID = 15A VGS(th) Zero Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS REV 1.0 2 2015/3/30

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/3/30

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/3/30

N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/3/30