P8010BI

P8010BI UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 46TC = 25 ° C SYMBOL VGS mJ V 2.7 LIMITS UNITS VDS 100 ID IAS IDM TJ, TSTG Avalanche Energy L = 0.1mH RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current TC = 25 ° C 100V Pulsed Drain Current1 85mΩ @VGS = 10V 15A Drain-Source Voltage 7.2 12Avalanche Current WPower Dissipation EAS 18TC = 100 ° C PD A ± 20 TYPICAL °C-55 to 150Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE REV 1.0 1 2017/2/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 35 A 67 95 61 85 25 S 527 1.5 Ω 18.5 2.7 5.1 15 A 1.1 V 33 nS 35 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 nC VDS = 5V, ID = 15AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg VGS = 10 V， VDS = 0.5V(BR)DSS, ID = 15AGate-Source Charge2 Gate-Drain Charge2 Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS TEST CONDITIONS IDSS Gate-Body Leakage VDS = 80V, VGS = 0V, TJ = 125 ° CZero Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage VGS(th) mA IGSS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 15A, VGS = 0V gfs VDS = 80V, VGS = 0V V STATIC LIMITS UNITSPARAMETER SYMBOL nS Qgs trr Qrr IS VSD IF = 15A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) tr td(off) tf VDS = 40V ID @ 15A, VGS = 10V, RGEN =6Ω Reverse Transfer Capacitance Qgd VGS = 10V, ID = 15A Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A REV 1.0 2 2017/2/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/16

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/16

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/2/16

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2017/2/16

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/16

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/16