P8010BD UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25℃ MOSFET dV/dt Ruggedness 16.2 Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS ID IDM SYMBOL LIMITS A V TYPICAL 7.2 ± 20 VDS 100 MAXIMUM 2.7 V/nS TC = 25 ° C EAS 4.1 RqJC PD dV/dt Drain-Source Voltage 85mΩ @VGS = 10V 15A Junction-to-Case THERMAL RESISTANCE Avalanche Energy L =0.1mH VGSGate-Source Voltage ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) TC = 100 ° CPower Dissipation TJ, Tstg V Peak Diode Recovery dV/dt2 W mJ Pulsed Drain Current1 Avalanche Current IAS REV 1.2 1 2014/5/26
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 35 A 67 95 61 85 25 S 527 1.5 Ω 18.5 2.7 5.1 15 A 1.1 V 33 nS 35 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. IF = 15A, dlF/dt = 100A / μS pF V UNITS VDS = 0V, VGS = ± 20V VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA STATIC Drain-Source Breakdown Voltage V(BR)DSS TEST CONDITIONS LIMITS Output Capacitance IDSS VGS = 10V , ID = 15A Coss Crss VGS = 4.5V, ID = 10A VDS = 80V, VGS = 0V, TJ = 125 ° C Ciss VDS = 5V, ID = 15A RDS(ON) trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 80V, VGS = 0V Qgd Rg td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Total Gate Charge2 Gate Threshold Voltage Drain-Source On-State Resistance1 IF = 15A, VGS = 0V nSVDS = 40V, ID @ 15A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) trRise Time2 Turn-Off Delay Time2 Fall Time2 Zero Gate Voltage Drain Current IGSS gfs Qg VGS = 10 V, VDS = 0.5V(BR)DSS, ID = 15A VDS = 5V, VGS = 10V Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz On-State Drain Current1 ID(ON) Gate-Body Leakage VGS(th) Forward Transconductance1 PARAMETER SYMBOL REV 1.2 2 2014/5/26
N-Channel Enhancement Mode MOSFET REV 1.2 3 2014/5/26
N-Channel Enhancement Mode MOSFET REV 1.2 4 2014/5/26
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2014/5/26