P8008HVA UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM Junction-to-Lead 80 ° C / W IDM SYMBOL 3.2 LIMITS A VGS VDS V W UNITS 2.5 12.5 mJ ± 25 Drain-Source Voltage TA = 25 ° C ID TA = 25 ° C 80V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 68mΩ @VGS = 10V 3.2A Pulsed Drain Current1 Avalanche Current IAS 15.8 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TA= 70° C Gate-Source Voltage L =0.1mH ID PD 1.5 Junction-to-Ambient RqJA SOP-8 RqJL Power Dissipation Tj, Tstg REV 1.0 1 2014/9/4

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.9 3 ± 100 nA 44 68 47 78 17 S 576 1.2 Ω 1.1 A 1.3 V 30 nS 40 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. VDS = 0V, VGS = ± 25V IDSS Coss Crss IF = 3A, dlF/dt = 100A / μS Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz nCQgs mA DYNAMIC VDS = 64V, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 3A, VGS = 0V nSVDS = 40V, ID @ 3A, VGS = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VDS = 80V, VGS = 10V, ID = 3A gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 10V, ID = 3A Input Capacitance Qgd Output Capacitance Qg Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 64V, VGS = 0V, TJ = 70 ° C PARAMETER Forward Transconductance1 VGS = 4.5V, ID = 1A Drain-Source On-State Resistance1 RDS(ON) LIMITS VGS = 0V, ID = 250mA mΩ VGS = 10V, ID = 3A SYMBOL UNITS Gate-Body Leakage VGS(th) REV 1.0 2 2014/9/4

Dual N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/9/4

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/9/4

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/4