P8008BVA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ° C / WJunction-to-Ambient 69 Junction-to-Lead RqJL IDM SYMBOL 3.5 LIMITS A VGS 14.7 ID IAS UNITS 2.8 10.8 mJ 1.1 ± 25 ID TA = 25 ° C 80V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 68mΩ @VGS = 10V 3.5A TYPICAL TA =70 ° C W Gate-Source Voltage Avalanche Energy SYMBOL RqJA Operating Junction & Storage Temperature Range Pulsed Drain Current1 Avalanche Current 1.8 THERMAL RESISTANCE TA= 25 ° C L = 0.1mH PD MAXIMUM Drain-Source Voltage VDS 80 V -55 to 150 EAS Power Dissipation Tj, Tstg REV 1.0 1 2014/11/21

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 47 78 44 68 17 S 562 1.2 Ω 4.5 1.4 A 1.3 V 17 nS 10 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. IF = 3A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 25V IDSS Coss Crss VDS = 64V, VGS = 0V IF = 3A, VGS = 0V VGS = 0V,VDS = 0V,f = 1MHz Qg pF nC Qgs DYNAMIC Gate-Drain Charge2 Total Gate Charge2(4.5V) Gate-Source Charge2 Drain-Source Breakdown Voltage V TEST CONDITIONS Reverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Qrr nSVDS = 40V, ID @ 3A,VGS = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS = 10V, ID = 3A Drain-Source On-State Resistance1 RDS(ON) LIMITS V(BR)DSS gfs Reverse Transfer Capacitance Total Gate Charge2(10V) Gate Resistance VDS = 80V, ID = 3A,VGS = 10V VGS = 0V, VDS = 25V, f = 1MHz Rg Qgd IGSS Output Capacitance Qg Forward Transconductance1 Ciss VDS = 10V, ID = 3A Input Capacitance mΩ VGS = 4.5V, ID = 1A SYMBOL UNITS Zero Gate Voltage Drain Current VGS = 0V, ID = 250mA mAVDS = 64V, VGS = 0V, TJ = 70 ° C Gate-Body Leakage VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250mA PARAMETER STATIC REV 1.0 2 2014/11/21

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/11/21

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/11/21

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/11/21