P8008BDA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 62.5 3.2 Pulsed Drain Current1 IDM 50 L=0.1mHAvalanche Energy EAS 11 mJ V80 ± 25VGS ° C / W THERMAL RESISTANCE RqJC Power Dissipation Junction-to-Ambient SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 68mΩ @VGS = 10V Drain-Source Voltage VDS TC = 25 ° C ID 16A ID 80V Continuous Drain Current IASAvalanche Current MAXIMUM PD TJ, TSTG TC = 25 ° C TC = 100 ° C RqJA Junction & Storage Temperature Range TYPICALSYMBOL Junction-to-Case LIMITS -55 to 150 W UNITS A REV 1.1 1 2015/7/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 51 78 48 68 30 S 558 1.2 Ω 13.5 1.8 16 A 1.3 V 21 nS 19 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF=15A,dIF/dt=100A/mSReverse Recovery Time Reverse Recovery Charge trr Qrr TEST CONDITIONS Rg VGS = 0V, VDS = 0V, f = 1MHz STATIC td(off) tf Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDS = 40V, ID @ 15A, VGS = 10V, RGEN = 6Ω td(on) tr UNITS Gate Threshold Voltage IS VSD Total Gate Charge2 Gate Resistance Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Fall Time2 IF = 15A, VGS = 0V Input Capacitance Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 VGS = 10V, ID = 15A pF Ciss Coss DYNAMIC mΩ Qg VDS = 40V, VGS = 10V, ID = 15A Qgd Qgs Crss nC Drain-Source Breakdown Voltage VGS =4.5V, ID = 10A VDS = 5V, ID = 15A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Drain-Source On-State Resistance1 V IGSS IDSS gfs VDS = 64V, VGS = 0V VDS = 60V, VGS = 0V , TJ = 125° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 25V mA RDS(ON) PARAMETER SYMBOL LIMITS REV 1.1 2 2015/7/29

N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/7/29

N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/7/29

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2015/7/29

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.1 6 2015/7/29

N-Channel Enhancement Mode MOSFET REV 1.1 7 2015/7/29

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/7/29