P7515BDB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Power Dissipation Tj, Tstg Junction-to-Ambient RqJA W IDM ° C / W mJ Avalanche Energy TC = 100 ° C 62.5 45L = 1mH 62.5 SYMBOL °C-55 to 150Junction & Storage Temperature Range MAXIMUM ID TC = 25 ° C 150V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 75mΩ @VGS = 10V 19A Gate-Source Voltage Drain-Source Voltage LIMITS A VGS VDS V UNITS SYMBOL 9.5 ID 150 ± 20 THERMAL RESISTANCE TYPICAL PD Pulsed Drain Current1 Avalanche Current IAS 11.7 Junction-to-Case RqJC EAS TC = 25 ° C REV 1.0 1 2017/7/5

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 1 2 3 ± 100 nA 67 88 60 75 14 S 640 4.4 Ω 13.8 8.7 5.3 15 A 1.2 V 68 nS 135 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 8A IGSS Gate Threshold Voltage mΩ pF Forward Transconductance1 VGS = 10V, ID = 10A VDS = 100V, VGS = 0V , TJ = 125 ° C Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS = 0V, ID = 250mA TEST CONDITIONS UNITS VDS = VGS, ID = 250mA LIMITS tr td(off) VDS = 0V, VGS = ± 20V VDS = 120V, VGS = 0V VDS = 75V , VGS = 10V , ID = 10AQgs Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) Ciss IDSS Coss Crss Total Gate Charge2 Qg(VGS=4.5V) Reverse Recovery Time IF = 10A, VGS = 0V IS VSD trr IF = 10A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current STATIC Drain-Source Breakdown Voltage V PARAMETER SYMBOL mA DYNAMIC Input Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd Output Capacitance Qg(VGS=10V) VGS = 0V, VDS = 50V, f = 1MHz VDS = 5V, ID = 10Agfs VDS = 75V ID @ 10A, VGS = 10V, RGEN =6Ω Forward Voltage1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nC nS td(on) tf Turn-On Delay Time2 REV 1.0 2 2017/7/5

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/7/5

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/7/5

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/7/5

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/7/5

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/7/5

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/7/5