P7004EV UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. MAXIMUM Power Dissipation TA = 70 ° C THERMAL RESISTANCE SYMBOL PD TJ, TSTG TA = 25 ° C RqJA SYMBOL VDS LIMITS IAS VGS Pulsed Drain Current1 IDM ID -40 -19Avalanche Current EASAvalanche Energy L = 0.1mH RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 70mΩ @VGS = -10V -4A ID -40V TA = 25 ° C Operating Junction & Storage Temperature Range UNITS -20 -3.2 ± 20 V A 1.9 -55 to 150 TYPICAL 1.2 Continuous Drain Current mJ W Junction-to-Ambient Ver 1.0 1 2012/4/16

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -40 -1.5 -2 -2.5 ± 100 nA -10 28 S 556 146 8.6 Ω 2.3 4.4 -1.4 A -1.3 V 15 nS 7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩ QgTotal Gate Charge2 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -4A VGS = 0V, f = 1MHz nC VSDForward Voltage1 tf IF = -4A, VGS = 0V Continuous Current tr td(off) Gate Resistance Rg TEST CONDITIONS Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 PARAMETER SYMBOL Fall Time2 Zero Gate Voltage Drain Current Gate-Body Leakage Qgd Qgs Coss Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IS nSVDS = -20V, ID@ -1A, VGS = -10V, RGS = 6Ω td(on) VGS = 0V, VDS = -20V, f = 1MHz gfs Gate Threshold Voltage DYNAMIC V Turn-On Delay Time2 Input Capacitance Ciss Crss Drain-Source On-State Resistance1 VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS VDS = -32V, VGS = 0V RDS(ON) IGSS pF Drain-Source Breakdown Voltage VDS = -10V, ID = -4A VGS(th) mAIDSS VDS = -30V, VGS = 0V , TJ = 70 ° C UNIT Reverse Recovery Charge LIMITS STATIC Qrr Reverse Transfer Capacitance Reverse Recovery Time trr IF = -4A, dlF/dt = 100A / mS VGS = -10V, ID = -4A Ver 1.0 2 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16