P6803HVG UNIKC | Alldatasheet
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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W SOP-8 Power Dissipation Tj, Tstg Junction-to-Ambient RqJA Gate-Source Voltage ID PD Pulsed Drain Current1 THERMAL RESISTANCE TYPICAL TA= 70° C ID TA = 25 ° C 30V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 58mΩ @VGS = 10V 4.5A Drain-Source Voltage TA = 25 ° C W UNITS 3.6 1.3 ± 20 IDM SYMBOL 4.5 LIMITS A VGS VDS V MAXIMUM 62.5 Junction & Storage Temperature Range SYMBOL °C-55 to 150 REV 1.0 1 2014/10/17
Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.5 3 ± 100 nA 20 A 44 58 60 77 4.5 S 200 6.5 1.2 1.6 1.6 A 1.2 V 40 nS 80 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2%. 2Independent of operating temperature. mΩ VGS = 10V, ID = 3.5A SYMBOL UNITS Gate-Body Leakage VGS(th) On-State Drain Current1 VGS = 5V, ID = 2.5A Drain-Source On-State Resistance1 RDS(ON) LIMITS VGS = 0V, ID = 250mA ID(ON) VDS = 5V, VGS = 10V Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 20V, VGS = 0V, TJ = 55 ° C PARAMETER Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 5V, ID = 3.5A Input Capacitance Qgd Output Capacitance Qg gfs IF = 1A, dlF/dt = 100A / mS VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3.5A td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS IF = 1A, VGS = 0V nSVDS = 15V, RL = 15Ω ID @ 1A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TA = 25 ° C) td(on) tr nCQgs mA DYNAMIC VDS = 24V, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 15V, f = 1MHz Forward Transconductance1 pF VDS = 0V, VGS = ± 20V IDSS Coss Crss IS VSD trr REV 1.0 2 2014/10/17
Dual N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/10/17
Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/10/17
Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/10/17