P6503FMA

P6503FMA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. W UNITS -12 -2.4 ± 12 V A VGS -3.1 LIMITS ID IDM TYPICAL 0.62 0.96 MAXIMUM Pulsed Drain Current1 THERMAL RESISTANCE 55mΩ @VGS = -10V TA = 25 ° C -3.1A SYMBOL ID -30V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage SYMBOL °C-55 to 150 RqJA 130 PD TJ, TSTGOperating Junction & Storage Temperature Range Junction-to-Ambient2 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. REV 1.2 1 2016/1/22

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -0.45 -0.9 -1.2 ± 100 nA -10 68 80 59 65 43 55 11 S 903 9.3 1.5 2.6 100 -0.9 A -1.1 V 11.7 nS 3.6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time trr IF = -3.1A, dlF/dt = 100A /mS Reverse Transfer Capacitance V IGSS IDSS Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -3.1A VDS = 0V, VGS = ± 12V VDS = -20V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = -250mA Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = -24V, VGS = 0V Gate Threshold Voltage SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = -15V, f = 1MHz VGS = -2.5V, ID = -1A Zero Gate Voltage Drain Current V(BR)DSS Total Gate Charge2 Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance VGS(th) VGS = 0V, ID = -250mA nC mΩ PARAMETER TEST CONDITIONS VGS = -4.5V, ID = -3.1A STATIC LIMITS UNITS mA VDD = -15V,ID @ -3.1A, VGS= -4.5V, RG = 6ΩTurn-Off Delay Time2 nS tf VDS = -5V, ID = -2.9A VDS = -15V,VGS =-4.5V, ID= -3.1A pF Crss Qg Gate-Source Charge2 IF = -3.1A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 Rise Time2 REV 1.2 2 2016/1/22

P-Channel Enhancement Mode MOSFET REV 1.2 3 2016/1/22

P-Channel Enhancement Mode MOSFET REV 1.2 4 2016/1/22

P-Channel Enhancement Mode MOSFET REV 1.2 5 2016/1/22

P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：2K ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 REV 1.2 6 2016/1/22

P-Channel Enhancement Mode MOSFET REV 1.2 7 2016/1/22

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2016/1/22