P605

AOP605_09 AOSMD | Alldatasheet

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V DSe(V)e=e30Veeeeeeeeeee=30V IDe=e7.5Ae(VGSe=e10V)eee=6.6Ae(VGSe=e=10V) RDS(ON) <e28mΩ (VGSe=e10V) <e35mΩ e(VGSe=e=10V) <e43mΩ e(VGSe=e4.5V)eee<e58mΩ e(VGSe=e=4.5V) General Description TheeAOP605/Leuseseadvancedetrenchetechnologyeto provideeexcellenteR DS(ON)eandelowegateecharge.eThe complementaryeMOSFETseformeaehigh=speedepower inverter,esuitableeforeaemultitudeeofeapplications. AOP605eandeAOP605Leareeelectricallyeidentical. =RoHSeCompliant =AOP605LeiseHalogeneFree D21 PDIP-8 n-channel p-channel PDIP8 Top View Bottom View Alpha & Omega Semiconductor, Ltd.

TJ=55°C 5 IGSS 100 nA VGS(th) 1 1.8 3 V ID(ON) 30 A 22.6 28 TJ=125°C 33 43 m Ω gFS 12 16 S VSD 0.76 1 V IS 4 A Ciss 680 820 pF Coss 102 pF Crss 77 pF Rg 1.2 2 Ω Qg(10V) 13.84 16.6 nC Qg 6.74 8.1 nC Qgs 1.82 nC Qgd 3.2 nC tD(on) 4.6 ns tr 4.1 ns tD(off) 20.6 ns tf 5.2 ns trr 16.5 20 ns Qrr 7.8 nC THIS7PRODUCT7HAS7BEEN7DESIGNED7AND7QUALIFIED7FOR7THE7CONSUMER7MARKET.7APPLICATIONS7OR7USES7AS7CRITICAL7 COMPONENTS7IN7LIFE7SUPPORT7DEVICES7OR7SYSTEMS7ARE7NOT7AUTHORIZED.7AOS7DOES7NOT7ASSUME7ANY7LIABILITY7ARISING OUT7OF7SUCH7APPLICATIONS7OR7USES7OF7ITS7PRODUCTS.77AOS7RESERVES7THE7RIGHT7TO7IMPROVE7PRODUCT7DESIGN, FUNCTIONS7AND7RELIABILITY7WITHOUT7NOTICE. Body7Diode7Reverse7Recovery7charge Body7Diode7Reverse7Recovery7time Total7Gate7Charge VGS=4.5V,7VDS=15V,7ID=7.5A IF=7.5A,7dI/dt=100A/µs IF=7.5A,7dI/dt=100A/µs TurnUOff7DelayTime TurnUOff7Fall7Time TurnUOn7DelayTime VGS=10V,7VDS=15V,7RL=2.0Ω , RGEN=6Ω Gate7resistance VGS=0V,7VDS=0V,7f=1MHz Body7Diode7Forward7Voltage IS=1A,7VGS=0V VGS=0V,7VDS=15V,7f=1MHz Reverse7Transfer7Capacitance Input7Capacitance Output7Capacitance. SWITCHING PARAMETERS Total7Gate7Charge Gate7Source7Charge Gate7Drain7Charge TurnUOn7Rise7Time Maximum7BodyUDiodeContinuous7Current DYNAMIC PARAMETERS mΩ V GS=4.5V,7ID=6.0A RDS(ON) Static7DrainUSource7OnUResistance VGS=10V,7ID=7.5A Forward7Transconductance VDS=5V,7ID=7.5A Gate7Threshold7Voltage VDS=VGS77ID=250µA On7state7drain7current VGS=10V,7VDS=5V µA GateUBody7leakage7current VDS=0V,7VGS=±20V n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS DrainUSource7Breakdown7Voltage ID=250µA,7VGS=0V IDSS Zero7Gate7Voltage7Drain7Current VDS=24V,7VGS=0V A:7The7value7of7R7θJA7is7measured7with7the7device7mounted7on71in727FRU47board7with72oz.7Copper,7in7a7still7air7environment7with7T7A=25°C.7The7value in7any77given7application7depends7on7the7user's7specific7board7design.7The7current7rating7is7based7on7the7t777≤710s7thermal7resistance7rating. B:7Repetitive7rating,7pulse7width7limited7by7junction7temperature. C.7The7R7θJA7is7the7sum7of7the7thermal7impedence7from7junction7to7lead7R7θJL7and7lead7to7ambient. D.7The7static7characteristics7in7Figures717to767are7obtained7using7807µs7pulses,7duty7cycle70.5%7max. E.7These7tests7are7performed7with7the7device7mounted7on717in7727FRU47board7with72oz.7Copper,7in7a7still7air7environment7with7T7A=25°C.7The7SOA curve7provides7a7single7pulse7rating. Rev747:7Jan72009 Alpha7Omega7Semiconductor,7Ltd.

U VDC Ig Vds DUT U VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate7Charge7Test7Circuit7&7Waveform Ig Vgs U VD C DUT L Vgs Vds Isd Isd Diode7Recovery7Test7Circuit7&7W aveform s Vds7U Vds7+ I F dI/dt I R M rr Vdd Vdd Q 777=7U777Idt trr U V DC D U T V dd V gs V ds V gs R L R g V gs V ds 10% 90 % R esistive7S w itching7Test7C ircuit7& 7W aveform s t t rd(o n) ton td(off) t f toff Alpha7Omega7Semiconductor,7Ltd.

TJ=55°C U5 IGSS ±100 nA VGS(th) U1.2 U2 U2.4 V ID(ON) 30 A 28 35 TJ=125°C 37 45 44 58 m Ω gFS 13 S VSD U0.76 U1 V IS U4.2 A Ciss 920 1100 pF Coss 190 pF Crss 122 pF Rg 3.6 4.4 Ω Qg(10V) 18.5 22.2 nC Qg(4.5V) 9.6 11.6 nC Qgs 2.7 nC Qgd 4.5 nC tD(on) 7.7 ns tr 5.7 ns tD(off) 20.2 ns tf 9.5 ns trr 20 24 ns Qrr 8.8 nC THIS7PRODUCT7HAS7BEEN7DESIGNED7AND7QUALIFIED7FOR7THE7CONSUMER7MARKET.7APPLICATIONS7OR7USES7AS7CRITICAL7 COMPONENTS7IN7LIFE7SUPPORT7DEVICES7OR7SYSTEMS7ARE7NOT7AUTHORIZED.7AOS7DOES7NOT7ASSUME7ANY7LIABILITY7ARISING OUT7OF7SUCH7APPLICATIONS7OR7USES7OF7ITS7PRODUCTS.77AOS7RESERVES7THE7RIGHT7TO7IMPROVE7PRODUCT7DESIGN, FUNCTIONS7AND7RELIABILITY7WITHOUT7NOTICE. p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS DrainUSource7Breakdown7Voltage ID=U250µA,7VGS=0V IDSS Zero7Gate7Voltage7Drain7Current VDS=U24V,7VGS=0V µA GateUBody7leakage7current VDS=0V,7VGS=±20V mΩ VGS=U4.5V,7ID=U5A Gate7Threshold7Voltage VDS=VGS77ID=U250µA On7state7drain7current VGS=U10V,7VDS=U5V VDS=U5V,7ID=U6.6A RDS(ON) Static7DrainUSource7OnUResistance Forward7Transconductance VGS=U10V,7ID=U6.6A Diode7Forward7Voltage IS=U1A,VGS=0V Maximum7BodyUDiode7Continuous7Current Output7Capacitance Reverse7Transfer7Capacitance Gate7resistance DYNAMIC PARAMETERS Input7Capacitance V GS=0V,7VDS=U15V,7f=1MHz VGS=0V,7VDS=0V,7f=1MHz Total7Gate7Charge7(4.5V) Gate7Source7Charge Gate7Drain7Charge SWITCHING PARAMETERS Total7Gate7Charge7(10V) V GS=U10V,7VDS=U15V,7ID=U6.6A TurnUOn7DelayTime VGS=U10V,7VDS=U15V,7RL=2.3Ω , RGEN=3Ω TurnUOn7Rise7Time TurnUOff7DelayTime TurnUOff7Fall7Time Body7Diode7Reverse7Recovery7Time I F=U6.6A,7dI/dt=100A/µs Body7Diode7Reverse7Recovery7ChargeIF=U6.6A,7dI/dt=100A/µs A:7The7value7of7R7θJA7is7measured7with7the7device7mounted7on71in727FRU47board7with72oz.7Copper,7in7a7still7air7environment7with7T7A7=25°C.7The value7in7any7a7given7application7depends7on7the7user's7specific7board7design.7The7current7rating7is7based7on7the7t777 ≤710s7thermal7resistance rating. B:7Repetitive7rating,7pulse7width7limited7by7junction7temperature. C.7The7R 7θJA7is7the7sum7of7the7thermal7impedence7from7junction7to7lead7R7θJL7and7lead7to7ambient. D.7The7static7characteristics7in7Figures717to76,12,147are7obtained7using7807µs7pulses,7duty7cycle70.5%7max. E.7These7tests7are7performed7with7the7device7mounted7on717in7727FRU47board7with72oz.7Copper,7in7a7still7air7environment7with7T7A=25°C.7The SOA7curve7provides7a7single7pulse7rating. A:7The7value7of7R7θJA7is7measured7with7the7device7mounted7on71in727FRU47board7with72oz.7Copper,7in7a7still7air7environment7with7T7A7=25°C.7The value7in7any77given7application7depends7on7the7user's7specific7board7design.7The7current7rating7is7based7on7the7t777≤710s7thermal7resistance rating. B:7Repetitive7rating,7pulse7width7limited7by7junction7temperature. C.7The7R7θJA7is7the7sum7of7the7thermal7impedence7from7junction7to7lead7R7θJL7and7lead7to7ambient. D.7The7static7characteristics7in7Figures717to76,12,147are7obtained7using7807µs7pulses,7duty7cycle70.5%7max. E.7These7tests7are7performed7with7the7device7mounted7on717in7727FRU47board7with72oz.7Copper,7in7a7still7air7environment7with7T7A=25°C.7The SOA7curve7provides7a7single7pulse7rating. Rev747:7Jan72009 Alpha7Omega7Semiconductor,7Ltd.

Gate7Charge7Test7Circuit7&7Waveform U + U U10V Ig V gs U V D C D U T L V gs Isd D iod e7R ec ove ry7T est7C ircu it7& 7W ave form s V ds7U V ds7+ d I/d t R M rr V d d V d d Q 777= 7U777Idt t rr UIsd UV ds FUI UI VDC DUT Vdd Vgs Vds Vgs RL Rg Resistive7Sw itching7Test7C ircuit7&7W aveform s U Vgs Vds t t t t t t 90% 10% r on d(off) f off d(on) Alpha7Omega7Semiconductor,7Ltd.