7934

AON7934 AOSMD | Alldatasheet

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30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 30V 30V I D (at V GS =10V) 16A 18A R DS(ON) (at V GS =10V) <10.2m Ω <7.7mΩ R DS(ON) (at V GS = 4.5V) <15.8m Ω <11.6mΩ 100% UIS Tested Application 100% Rg Tested

• Latest Trench Power AlphaMOS ( αMOS LV) technology
• Very Low RDS(on) at 4.5V GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial Absolute Maximum Ratings T A =25° C unless otherwise noted VDS Power DFN3x3A Top View Bottom View (S1/D2) S2 S2 Top View Bottom View Symbol V DS VGS IDM IAS EAS VDS Spike VSPIKE TJ, T STG Parameter Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 t ≤ 10s 40 50 40 50 Steady-State 70 90 70 90 Steady-State R θJC 4.5 5.4 4.2 5 100ns Maximum Junction-to-Case ° C/W ° C/W Maximum Junction-to-Ambient A D R θJA Maximum Junction-to-Ambient A ° C/W Parameter ±20 Power Dissipation B PD TC =25° C Power Dissipation A PDSM TA=70° C TA=25° C V A 7.8 ±20 V Pulsed Drain Current C Absolute Maximum Ratings T A =25° C unless otherwise noted Avalanche Energy L=0.05mH C 3.0 mJ 4.1 Avalanche Current C Continuous Drain Current 9 I DSM Units 36 36 A Max Q2 A V 2.5 2.5 Units W W Thermal Characteristics T C =100° C Max Q1 Gate-Source Voltage Drain-Source Voltage Continuous Drain Current G 16 ID TC =25° C TC =100° C 0.9 0.9 Junction and Storage Temperature Range -55 to 150 ° C TA=70° C TA=25° C Rev0 : April 2012 www.aosmd.com Page 1 of 10

VDS =30V, V GS =0V 1 TJ=55° C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.2 1.8 2.2 V 8.3 10.2 TJ=125° C 11.2 13.7 12.4 15.8 m Ω gFS 50 S VSD 0.7 1 V IS 16 A C iss 485 pF C oss 235 pF C rss 32 pF R g 0.9 1.8 2.7 Ω Q g(10V) 8 11 nC Q g(4.5V) 3.9 5.3 nC Q gs 1.1 nC Q gd 2.1 nC tD(on) 3.5 ns tr 2.8 ns t 16.3 ns Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS =10V, V DS =15V, R L=1.2 Ω , R =3 Ω Gate resistance VGS =0V, V DS =0V, f=1MHz Reverse Transfer Capacitance Total Gate Charge V GS =10V, V DS =15V, I D =13A Gate Source Charge Gate Drain Charge Total Gate Charge I S=1A,V GS =0V VDS =5V, I D =13A VGS =4.5V, I D =10A Forward Transconductance Diode Forward Voltage V GS =10V, I D =13A R DS(ON) Static Drain-Source On-Resistance IDSS µA VDS =V GS ID =250 µA VDS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID =250 µA, V GS =0V tD(off) 16.3 ns tf 3 ns trr 9.9 ns Q rr 12.9 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/ µs Turn-Off DelayTime R GEN =3 Ω Turn-Off Fall Time IF=13A, dI/dt=500A/ µsBody Diode Reverse Recovery Time A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA t≤ 10s value and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. Rev0 : April 2012 www.aosmd.com Page 2 of 10

VDS =30V, V GS =0V 1 TJ=55° C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.2 1.8 2.2 V 6.3 7.7 TJ=125° C 8.4 10.3 9.1 11.6 m Ω gFS 100 S VSD 0.7 1 V IS 18 A C iss 807 pF C oss 314 pF C rss 40 pF R g 0.6 1.3 2 Ω Q g(10V) 12.9 17.5 nC Q g(4.5V) 6 8.5 nC Q gs 2.1 nC Q gd 3 nC tD(on) 4.8 ns tr 3.3 ns t 18.8 ns Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS =10V, V DS =15V, R L=1 Ω , R =3 Ω Gate resistance VGS =0V, V DS =0V, f=1MHz Total Gate Charge IS=1A,V GS =0V Gate Source Charge Gate Drain Charge V GS =10V, V DS =15V, I D =15A Reverse Transfer Capacitance ID =250 µA, V GS =0V Diode Forward Voltage VDS =V GS ID =250 µA VDS =0V, V GS = ±20V Gate-Body leakage current Static Drain-Source On-Resistance I DSS STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current µA R DS(ON) m Ω VDS =5V, I D =15A VGS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Forward Transconductance VGS =4.5V, I D =10A VGS =10V, I D =15A tD(off) 18.8 ns tf 3.3 ns trr 11.3 ns Q rr 15 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/ µs Turn-Off DelayTime R GEN =3 Ω Turn-Off Fall Time IF=15A, dI/dt=500A/ µsBody Diode Reverse Recovery Time A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initial T J =25 °C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 °C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 °C. Rev 0: April 2012 www.aosmd.com Page 6 of 10

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Id L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS E = 1/2 LI AR AR Vdd Vgs Vgs Rg DUT VDC Vgs Id Vgs I Ig Vgs VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR dI/dt IRM rr Vdd Vdd Q = - Idt trr Rev 0: April 2012 www.aosmd.com Page 10 of 10