6908A

AON6908A AOSMD | Alldatasheet

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30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 30V 30V I D (at V GS =10V) 46A 80A R DS(ON) (at V GS =10V) <8.9m Ω <3.6mΩ R DS(ON) (at V GS = 4.5V) <12.5m Ω <4.5mΩ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS , I AR EAS , E AR VDS Spike VSPIKE TJ, T STG Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 t ≤ 10s 29 24 35 29 Steady-State 56 50 67 60 Steady-State R θJC 3.3 1.2 4 1.6 100ns 36 36 V Junction and Storage Temperature Range -55 to 150 ° C Thermal Characteristics 1.9 2.1 1.2 1.3 11.5 17 46 80 100 V V ±20 ±12 A 200 V DS Max Q1 Max Q2 Units Units 36 80 A W Absolute Maximum Ratings T A=25° C unless otherwise noted mJ Avalanche Current C Continuous Drain Current A I D 13.5 TC =100° C Pulsed Drain Current C Continuous Drain Current G Parameter Gate-Source Voltage Drain-Source Voltage WT A=70° C TA=25° C TA=25° C IDSM TA=70° C PD 31 78 Avalanche Energy L=0.1mH C 31 12 The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2 "Low Side" MOSFET is an SRFET™ that features low R DS(ON) to reduce conduction losses as well as an integrated Schottky diode with low Q RR and V f to reduce switching losses. The AON6908A is well suited for use in compact DC/DC converter applications. Maximum Junction-to-Case T C =25° C TC =100° C Power Dissipation A PDSM Power Dissipation B TC =25° C ° C/W ° C/W Maximum Junction-to-Ambient A D R θJA Maximum Junction-to-Ambient A ° C/W Top View Bottom View PIN1 DFN5X6 Top View Bottom View Bottom View Rev0 : Sep 2010 www.aosmd.com Page 1 of 11

VDS =30V, V GS =0V 1 TJ=55° C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.3 1.8 2.4 V ID(ON) 100 A 7.4 8.9 TJ=125° C 11.1 13.4 10 12.5 m Ω gFS 50 S VSD 0.7 1 V IS 34 A C iss 680 850 1110 pF C oss 260 380 540 pF C rss 18 30 51 pF R g 0.7 1.4 2.1 Ω Q g(10V) 10 12.5 15 nC Q g(4.5V) 4.6 5.7 6.9 nC Q gs 1.6 2 2.4 nC Q gd 1.5 2.6 3.6 nC tD(on) 5 ns tr 9.5 ns tD(off) 18.5 ns tf 4 ns trr 8 10.5 13 ns Q rr 13 17.2 21 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/ µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L=0.75 Ω , R GEN =3 Ω Gate resistance VGS =0V, V DS =0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS =10V, V DS =15V, I D =11.5A Gate Source Charge Gate Drain Charge Total Gate Charge V DS =V GS ID =250 µA R DS(ON) Static Drain-Source On-Resistance m Ω Forward Transconductance IS=1A,V GS =0V VDS =5V, I D =11.5A VGS =4.5V, I D =11.5A Diode Forward Voltage STATIC PARAMETERS Parameter Conditions IDSS µA VDS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current I D =250 µA, V GS =0V VGS =10V, V DS =5V VGS =10V, I D =11.5A Reverse Transfer Capacitance IF=11.5A, dI/dt=500A/ µs VGS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150° C. Ratings are based on low frequency and duty cycles to keep initial T J =25° C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150° C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. Rev 0 : Sep 2010 www.aosmd.com Page 2 of 11

VDS =30V, V GS =0V 0.5 TJ=55° C 100 IGSS 100 nA VGS(th) Gate Threshold Voltage 1 1.5 2 V ID(ON) 200 A 2.9 3.6 TJ=125° C 4.3 5.2 3.3 4.5 m Ω gFS 115 S VSD 0.4 0.7 V IS 80 A C iss 3500 4380 5260 pF C oss 340 490 640 pF C rss 160 280 400 pF R g 0.3 0.7 1.1 Ω Q g(4.5V) 24 31 38 nC Q gs 11 nC Q gd 9 nC tD(on) 10 ns tr 6 ns tD(off) 50 ns tf 7 ns trr 9 12 15 ns Q rr 17 22 27 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. STATIC PARAMETERS Parameter Conditions m Ω Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage ID =10mA, V GS =0V VGS =10V, V DS =5V VGS =10V, I D =20A On state drain current VGS =4.5V, I D =20A Forward Transconductance IDSS mA VDS =V GS ID =250 µA VDS =0V, V GS = ±12V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance Diode Forward Voltage V GS =10V, V DS =15V, R L=0.75 Ω , R GEN =3 Ω Reverse Transfer Capacitance VGS =0V, V DS =15V, f=1MHz Gate Drain Charge VGS =10V, V DS =15V, I D =20A Gate resistance IS=1A,V GS =0V Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ µs Turn-Off DelayTime VGS =0V, V DS =0V, f=1MHz Turn-Off Fall Time Gate Source Charge VDS =5V, I D =20A IF=20A, dI/dt=500A/ µs SWITCHING PARAMETERS Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Total Gate Charge A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150° C. Ratings are based on low frequency and duty cycles to keep initial T J =25° C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150° C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° C. Rev 0 : Sep 2010 www.aosmd.com Page 6 of 11

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Vdd Vgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR DSS E = 1/2 LI dI/dt IRM rr Vdd Vdd Q = - Idt AR AR trr Rev 0 : Sep 2010 www.aosmd.com Page 11 of 11