AO4706_10 AOSMD | Alldatasheet
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TJ, T STG Symbol Typ Max 31 40 59 75 R θJL 16 24 Pulsed Drain Current B 100 TA=70° C Continuous Drain Current AF TA=25° C Maximum Junction-to-Lead C Steady-State ° C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA ° C/W ° C/W Absolute Maximum Ratings T A =25° C unless otherwise noted V V±12 Gate-Source Voltage Drain-Source Voltage 30 I DSM 16.5 Maximum Junction-to-Ambient A Steady-State Power Dissipation TA=25° C PDSM Junction and Storage Temperature Range TA=70° C Maximum Units Parameter ° C -55 to 150 A13.2 3.1 W2.0 A Avalanche Current B 30 A Repetitive avalanche energy L=0.3mH B 135 mJ AO4706 30V N-Channel MOSFET Product Summary VDS (V) = 30V ID =16.5A (V GS = 10V) R DS(ON) < 6.8m Ω (V GS = 10V) R DS(ON) < 8.2m Ω (V GS = 4.5V) 100% UIS Tested 100% Rg Tested General Description SRFET TM The AO4706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. SRFET TM SOIC-8 Top View Bottom View D D D D S S S G G D S SRFET TM Soft R ecovery MOS FET : Integrated Schottky Diode Alpha & Omega Semiconductor, Ltd. www.aosmd.com
VDS =30V, V GS =0V 0.02 0.1 TJ=125° C 10 20 IGSS 0.1 µA VGS(th) Gate Threshold Voltage 1.5 1.85 2.4 V ID(ON) 100 A 5.6 6.8 TJ=125° C 8.4 10.5 6.8 8.2 m Ω gFS 112 S VSD 0.37 0.5 V IS 5 A C iss 4000 5000 pF C oss 520 pF C rss 217 pF R g 0.6 0.9 Ω Q g(10V) 59 77 nC Q g(4.5V) 27 35 nC Q gs 12 nC Q gd 11 nC tD(on) 9 ns tr 9 ns tD(off) 37 ns tf 8 ns trr 17 20 ns Q rr 21 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I F=16.5A, dI/dt=300A/ µs Drain-Source Breakdown Voltage On state drain current I D =1mA, V GS =0V VGS =10V, V DS =5V VGS =10V, I D =16.5A Reverse Transfer Capacitance IF=16.5A, dI/dt=300A/ µs VDS =V GS ID =250 µA Electrical Characteristics (T J=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS Zero Gate Voltage Drain Current mA VDS =0V, V GS = ±12V Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS m Ω V GS =4.5V, I D =15A IS=1A,V GS =0V VDS =5V, I D =16.5A Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L=0.9 Ω , R GEN =3 Ω Turn-Off Fall Time Turn-On DelayTime Total Gate Charge VGS =10V, V DS =15V, I D =17A Gate Drain Charge VGS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance V GS =0V, V DS =0V, f=1MHz A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX) =150° C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev4: Nov. 2010 Alpha & Omega Semiconductor, Ltd. www.aosmd.com
125ºC 125ºC 25ºC 25ºC Qrr Irm di/dt=1000A/us 125ºC 125ºC 25ºC 25ºC trr S 125ºC 25ºC 25ºC Is=20A Qrr Irm 125ºC 125ºC 25ºC 25ºC Is=20A 125º VDC Ig Vds D U T VD C Vgs Vgs 10V Q g Q gs Q gd C ha rge Gate Charge Test Circuit & Waveform VD C D U T Vdd Vgs Vds Vgs R L R g Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(o n) ton td(o ff) tf toff Vdd Vgs Id Vgs R g D U T VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Wav eforms Ig Vgs VD C D U T L Vds Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vd s - Vds + IF AR DSS E = 1 /2 LI dI/dt IRM rr Vdd Vdd Q = - Idt trr AR AR Alpha & Omega Semiconductor, Ltd. www.aosmd.com