AO4407A_10 AOSMD | Alldatasheet
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TJ, T STG Parameter Symbol Typ Max t ≤ 10s 32 40 Steady State 60 75 Steady State R θJL 17 24 Junction and Storage Temperature Range TA=70° C ID Gate-Source Voltage PD Avalanche Current G Repetitive avalanche energy L=0.3mH G Power Dissipation A TA=25° C Drain-Source Voltage Pulsed Drain Current B -30 Absolute Maximum Ratings T A=25° C unless otherwise noted Continuous Drain Current A Units Parameter TA=25° C TA=70° C Maximum Junction-to-Lead C ° C/W Thermal Characteristics Units Maximum Junction-to-Ambient A ° C/W Maximum Junction-to-Ambient A ° C/W R θJA A mJ V V 2.0 ° C -55 to 150 W Maximum -12 -10 3.1 ±25 -60 -26 101 AO4407A 30V P-Channel MOSFET Product Summary VDS = -30V ID = -12A (V GS = -20V) R DS(ON) < 11m Ω (V GS = -20V) R DS(ON) < 13m Ω (V GS = -10V) R DS(ON) < 17m Ω (V GS = -6V) 100% UIS Tested 100% Rg Tested General Description The AO4407A uses advanced trench technology to provide excellent R DS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View Bottom View D D D D S S S G G D S Alpha & Omega Semiconductor, Ltd. www.aosmd.com
TJ = 55° C -5 IGSS ±100 nA VGS(th) -1.7 -2.3 -3 V ID(ON) -60 A 8.5 11 TJ=125° C 11.5 15 10 13 12.7 17 gFS 21 S VSD -0.7 -1 V IS -3 A C iss 2060 2600 pF C oss 370 pF C rss 295 pF R g 2.4 3.6 Ω Q g 30 39 nC Q gs 4.6 nC Q gd 10 nC tD(on) 11 ns tr 9.4 ns tD(off) 24 ns tf 12 ns trr 30 40 ns Q rr 22 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I F=-12A, dI/dt=100A/ µs Drain-Source Breakdown Voltage On state drain current I D = -250 µA, V GS = 0V VGS = -10V, V DS = -5V VGS = -20V, I D = -12A Reverse Transfer Capacitance IF=-12A, dI/dt=100A/ µs Electrical Characteristics (T J=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS = V GS ID = -250 µA VDS = -30V, V GS = 0V VDS = 0V, V GS = ±25V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V GS = -6V, I D = -10A IS = -1A,V GS = 0V VDS = -5V, I D = -10A VGS = -10V, I D = -12A m Ω SWITCHING PARAMETERS Gate Source Charge Gate Drain Charge Total Gate Charge V GS =-10V, V DS =-15V, I D =-12A DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance V GS =0V, V DS =0V, f=1MHz Turn-Off DelayTime VGS =-10V, V DS =-15V, R L=1.25 Ω , R GEN =3 Ω Turn-Off Fall Time Turn-On DelayTime VGS =0V, V DS =-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time A: The value of R θ JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25° C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. E AR and I AR ratings are based on low frequency and duty cycles to keep T j=25C. Rev10: Nov 2010 Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Gate Charge Test Circuit & W aveform + - -10V Vdd Vgs Id Vgs Rg DUT VDC Vgs Vds Id Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds L E = 1/2 LI AR AR BV DSS IAR Ig Vgs VDC DUT L Vgs Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + dI/dt RM rr Vdd Vdd Q = - Idt trr -Isd -Vds F-I VDC DUT Vdd Vgs Vds Vgs RL Rg Resistive Switching Test Circuit & Waveforms Vgs Vds t t t t t t 90% 10% r on d(off) f off d(on) Alpha & Omega Semiconductor, Ltd. www.aosmd.com