4614

AO4614B_11 AOSMD | Alldatasheet

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Symbol Max p-channel Units V DS V VGS V IDM IAR EAR mJ TJ, T STG ° C Symbol Device Typ Max Units n-ch 48 62.5 ° C/W n-ch 74 110 ° C/W R θJL n-ch 35 50 ° C/W p-ch 48 62.5 ° C/W p-ch 74 110 ° C/W R θJL p-ch 35 50 ° C/W A 14 -20 9.8 Power Dissipation Continuous Drain Current A ID PD Avalanche Current B Repetitive avalanche energy L=0.1mH B TA=25° C TA=70° C Pulsed Drain Current B -55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A 40 -40 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Absolute Maximum Ratings T A =25° C unless otherwise noted Parameter Max n-channel W 1.28 1.28 R θJA Maximum Junction-to-Ambient A Steady-State -30 TA=70° C TA=25° C Steady-State Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel -55 to 150 Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s AO4614B 40V Dual P + N-Channel MOSFET Product Summary N-Channel P-Channel V DS (V) = 40V, -40V ID = 6A (V GS =10V) -5A (VGS=-10V) R DS(ON) < 30m Ω (V GS =10V) < 45m Ω (VGS= -10V) < 38m Ω (V GS =4.5V) < 63m Ω (VGS= -4.5V) 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested General Description The AO4614B uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. 4 5 Top View n-channel p-channel SOIC-8 Top View Bottom View Pin1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com

TJ=55° C 5 IGSS ±100 nA VGS(th) 1.7 2.5 3 V ID(ON) 30 A 24 30 TJ=125° C 36 45 30 38 gFS 19 S VSD 0.76 1 V IS 2 A C iss 410 516 650 pF C oss 82 pF C rss 43 pF R g 4.6 Ω Q g (10V) 8.9 10.8 nC Q g (4.5V) 4.3 5.6 nC Q gs 2.4 nC Q gd 1.4 nC tD(on) 6.4 ns tr 3.6 ns tD(off) 16.2 ns tf 6.6 ns trr 18 24 ns Q rr 10 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Output Capacitance Input Capacitance VGS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistance I S=1A,V GS =0V VGS =10V, I D =6A Diode Forward Voltage VGS =10V, V DS =20V, R L=3.3 Ω , R GEN =3 Ω Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge V GS =10V, V DS =20V, ID =6A R DS(ON) Static Drain-Source On-Resistance Forward Transconductance V GS =4.5V, I D =5A VDS =5V, I D =6A m Ω Gate Threshold Voltage VDS =V GS ID =250 µA On state drain current VGS =10V, V DS =5V µA Gate-Body leakage current VDS =0V, V GS = ±20V N Channel Electrical Characteristics (T J=25° C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID =250 µA, V GS =0V IDSS Zero Gate Voltage Drain Current VDS =40V, V GS =0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/ µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time I F=6A, dI/dt=100A/ µs Total Gate Charge VGS =0V, V DS =20V, f=1MHz A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. Rev2 : Nov. 2010 Alpha & Omega Semiconductor, Ltd. www.aosmd.com

TJ=55° C -5 IGSS ±100 nA VGS(th) -1.7 -2 -3 V ID(ON) -30 A 36 45 TJ=125° C 52 65 50 63 gFS 13 S VSD -0.76 -1 V IS -2 A C iss 750 940 1175 pF C oss 97 pF C rss 72 pF R g 14 Ω Q g (-10V) 17 22 nC Q g (-4.5V) 7.9 10 nC Q gs 3.4 nC Q gd 3.2 nC tD(on) 6.2 ns tr 8.4 ns tD(off) 44.8 ns tf 41.2 ns trr 21 27 ns Q rr 14 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. P-Channel Electrical Characteristics (T J=25° C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID = -250 µA, V GS =0V IDSS Zero Gate Voltage Drain Current VDS = -40V, V GS =0V µA Gate-Body leakage current VDS =0V, V GS = ±20V Gate Threshold Voltage VDS =V GS ID = -250 µA On state drain current VGS = -10V, V DS = -5V m Ω VDS = -5V, I D = -5A R DS(ON) Static Drain-Source On-Resistance Forward Transconductance V GS = -10V, I D = -5A VGS = -4.5V, I D = -4A Diode Forward Voltage IS= -1A,V GS =0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS = -20V, f=1MHz Gate resistance Output Capacitance VGS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS = -10V, V DS = -20V, ID = -5A VGS = -10V, V DS = -20V, R L=4 Ω , R GEN =3 Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Gate Source Charge Gate Drain Charge Turn-On DelayTime Total Gate Charge Body Diode Reverse Recovery Time I F= -5A, dI/dt=100A/ µs Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/ µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. Rev1 : Jan 2010 Alpha & Omega Semiconductor, Ltd. www.aosmd.com