P6015CSG UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 1mH ,starting TJ = 25˚C. 1.82 ° C / WRqJA 50 Junction-to-Case RqJC Gate-Source Voltage ID Avalanche Energy3 TC= 100° C Operating Junction & Storage Temperature Range SYMBOL Pulsed Drain Current1，2 Avalanche Current3 IAS 16 EAS THERMAL RESISTANCE TYPICAL PD ID TC= 25 ° C 150V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 60mΩ @VGS = 10V 21A Drain-Source Voltage TC= 25 ° C Power Dissipation Tj, Tstg W UNITS 128 mJ 150 ± 12 IDM SYMBOL LIMITS A VVGS VDS V MAXIMUM Junction-to-Ambient °C-55 to 150 REV 1.0 1 2014-11-10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 0.45 0.8 1.2 ± 100 nA 47 60 48 70 70 S 8096 159 124 2.5 Ω 240 115 338 384 21 A 1.3 V 59 nS 119 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Drain-Source On-State Resistance1 RDS(ON) VGS = 5V, ID = 10A mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz UNITSSYMBOL Gate-Body Leakage VGS(th) Forward Transconductance1 VDS =100V, VGS = 0V, TJ = 100° C VGS = 10V, ID = 15A VDS =120V, VGS = 0V , TC = 25 ° C Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS =5V, ID =15A Input Capacitance Qgd VDD = 75V, ID = 15A, VGS = 10V Output Capacitance QgTotal Gate Charge2 DYNAMIC gfs PARAMETER nCQgs TEST CONDITIONS VSD nSVDD = 75V,ID = 15A, RG= 25Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) td(off) QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time V(BR)DSS tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 trr IF = 15A, VGS = 0V Fall Time2 tr Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz mA Ciss IF = 15A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 12V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS REV 1.0 2 2014-11-10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014-11-10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014-11-10

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-11-10