P6004ED

P6004ED UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. UNITS -80 -16 ± 20 V-40 SYMBOL Avalanche Energy L = 0.1 mH Pulsed Drain Current1 TC = 100 ° C Avalanche Current IAS VGS -20TC = 25 ° C MAXIMUM Power Dissipation ID RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 60mΩ @VGS = -10V -20A ID -40V Continuous Drain Current VDS LIMITS IDM ° C / W RqJC RqJA PD TJ, TSTG THERMAL RESISTANCE SYMBOL -55 to 150 °C Junction-to-Case Junction-to-Ambient W TYPICAL 42TC = 25 ° C Operating Junction & Storage Temperature Range A mJ -20 EAS 19.5 Ver 1.1 1 2013-3-25

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -40 -1.5 -1.9 -3.0 ± 250 nA -10 86 92 45 60 11 S 548 131 6.8 Ω 2.3 -22 A -1.3 V 43 nS 44 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = -30V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V Total Gate Charge2 PARAMETER SYMBOL pF VDS = -32V, VGS = 0VIDSS LIMITS UNIT Qgs Reverse Transfer Capacitance VGS = 0V, VDS = -10V, f = 1MHz gfs Gate Threshold Voltage DYNAMIC V IGSS mA nC Drain-Source Breakdown Voltage VGS = -5V, ID = -12A VDS = -10V, ID = -10A VGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Reverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = -18A, VGS = 0V trr IS Fall Time2 td(on) tr td(off) Input Capacitance Qg VDS = 0.5V(BR)DSS, VGS = -10V, ID = -12A TEST CONDITIONS VGS = 0V, VDS = 0V , f = 1MHZ IF = -5A, dlF/dt = 100A / mS nSVDS = -20V, ID@ -6.7A, VGS = -10V, RGS = 6Ω tf VSD Qrr VGS = -10V, ID = -18A Crss Forward Voltage1 Reverse Recovery Time mΩ Rg Qgd STATIC Gate Resistance Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Drain-Source On-State Resistance1 RDS(ON) Ciss Coss Ver 1.1 2 2013-3-25

P-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-25

P-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-25

P-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-25