P6002OAG

P6002OAG UNIKC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 11

Technical content

N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 20V -20V TSOP-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 115mΩ @VGS = -4.5V 3.4A60mΩ @VGS = 4.5V RDS(ON) ID Channel N P-2.5A REV 1.2 1 2016/4/8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P N P N P -15 TJ, TSTG TA = 70 °C 7.4 Pulsed Drain Current1 0.72 mJ -20 ±8Gate-Source Voltage W PARAMETERS/TEST CONDITIONS VGS Drain-Source Voltage VDS SYMBOL Continuous Drain Current 1.5 -55 to 150 1.14 0.72 1.14PD UNITS 2.7 3.4 LIMITS V -2.5 Avalanche Current1 IAS A 5.5 -12 ID IDM TA = 25 °C TA = 70 °C Avalanche Energy L = 0.1mH TA = 25 °C EAS Power Dissipation Junction & Storage Temperature Range REV 1.2 1 2016/4/8

N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX N 20 P -20 N 0.4 0.75 1.3 P -0.4 -0.75 -1.3 N ±100 MAXIMUMSYMBOL TYPICAL UNITSPARAMETER Drain-Source Breakdown Voltage V(BR)DSS STATIC LIMITS V TEST CONDITIONS RqJA THERMAL RESISTANCE Junction-to-Lead 110Junction-to-Ambient t  10s VGS = 0V, ID = 250mA RqJC 80 RqJA 150Junction-to-Ambient VDS = 0V, VGS = ±8V VGS = 0V, ID = -250mA Gate Threshold Voltage Steady-State CH.SYMBOL °C / WSteady-State VDS = VGS, ID = 250mAVGS(th) VDS = VGS, ID = -250mA REV 1.2 2 2016/4/8 N ±100 P ±100 N 1 P -1 N 10 P -10 N 15 P -15 N 90 140 P 171 300 N 63 85 P 118 180 N 47 60 P 85 115 N 6 P 11 A VGS = 1.8V, ID = 2A VDS = 10V, VGS = 0V, TJ = 55 °CZero Gate Voltage Drain Current On-State Drain Current1 VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 5V, ID = 3.6A S VDS = -5V, VGS = -10V nA mA Forward Transconductance1 ID(ON) gfs VDS = -5V, ID = -3.1A RDS(ON) VGS = -1.8V, ID = -1A Drain-Source On-State Resistance1 VGS = 4.5V, ID = 3.6A VDS = 0V, VGS = ±8V VDS = 0V, VGS = ±8V VGS = 2.5V, ID = 3A Gate-Body Leakage VDS = -10V, VGS = 0V, TJ = 55 °C VGS = -2.5V, ID = -2A VDS = 5V, VGS = 10V IGSS VGS = -4.5V, ID = -3.1A mΩ IDSS REV 1.2 2 2016/4/8

N&P-Channel Enhancement Mode MOSFET N 263 P 415 N 128 P 126 N 87 P 78 N 1.65 P 6.1 N 4 P 4 N 0.5 P 1 N 1.6 P 1.1 N 6 P 10 Gate-Drain Charge2 Total Gate Charge2 Qg Coss DYNAMIC N-Channel V = 15V td(on) Qgd Turn-On Delay Time2 Gate-Source Charge2 Output Capacitance Crss Ciss N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz Gate Resistance VGS = 0V, VDS = 0V, f = 1M Hz Input Capacitance Reverse Transfer Capacitance Ω nCQgs pF N-Channel VDS = 0.5V(BR)DSS, VGS = 4.5V, ID = 3.6A P-Channel VDS = 0.5V(BR)DSS, VGS = 4.5V, ID = -3.1A Rg REV 1.2 3 2016/4/8 P 10 N 7 P 12 N 40 P 44 N 13 P 22 N 0.95 P -0.95 N 1.2 P -1.2 N 14 P 25 N 4 P 8 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = 3.6A, dlF/dt = 100A / mS IF = -3.1A, dlF/dt = 100A / mS trr Rise Time2 Reverse Recovery Charge IS VDS = 15V ID @ 3.6A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V, RL = 1Ω ID @ -3.1A, VGS = -10V, RGEN = 6 Ω d(on) VSD Qrr Continuous Current Reverse Recovery Time nS Forward Voltage1 IF = 3.6A, VGS = 0V IF = -3.1A, VGS = 0V A tr td(off) tf Turn-On Delay Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Turn-Off Delay Time2 Fall Time2 nS nC V REV 1.2 3 2016/4/8

N&P-Channel Enhancement Mode MOSFET REV 1.2 4 2016/4/8 REV 1.2 4 2016/4/8

N&P-Channel Enhancement Mode MOSFET REV 1.2 5 2016/4/8 REV 1.2 5 2016/4/8

N&P-Channel Enhancement Mode MOSFET REV 1.2 6 2016/4/8 REV 1.2 6 2016/4/8

N&P-Channel Enhancement Mode MOSFET REV 1.2 7 2016/4/8 REV 1.2 7 2016/4/8

N&P-Channel Enhancement Mode MOSFET REV 1.2 8 2016/4/8 REV 1.2 8 2016/4/8

N&P-Channel Enhancement Mode MOSFET A. Marking Information(产品代码为：52） B. Tape&Reel Information: 3000pcs/Reel REV 1.2 9 2016/4/8 REV 1.2 9 2016/4/8

N&P-Channel Enhancement Mode MOSFET REV 1.2 10 2016/4/8 REV 1.2 10 2016/4/8

N&P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 11 2016/4/8 REV 1.2 11 2016/4/8