P5803NAG UNIKC | Alldatasheet

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N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V -30V TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. THERMAL RESISTANCE SYMBOL -10 0.8 0.5 RqJA 160P TJ, TSTG PD -30 ± 20 -1.6 Channel N P SYMBOL TA = 25 ° C 3A58mΩ @VGS = 10V Gate-Source Voltage VGS Drain-Source Voltage VDS -2A115mΩ @VGS = -10V TA = 70 ° C Continuous Drain Current Pulsed Drain Current1 Junction-to-Ambient MAXIMUMCHANNEL 0.8 -55 to 150 Power Dissipation Junction & Storage Temperature Range TA = 25 ° C TA = 70 ° C ° C / W ID IDM RDS(ON) PARAMETERS/TEST CONDITIONS ID N TYPICAL 0.5 160 W UNITS 2.3 ± 20 LIMITS V A Ver 1.0 1 2012/4/12

N&P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX N 30 P -30 N 1.0 1.2 2.5 P -1.0 -1.6 -2.5 N ± 100 P ± 100 N 1 P -1 N 10 P -10 N 30 P -10 N 68 88 P 157 185 N 47 58 P 96 115 N 6 P 4 N 216 P 261 N 99 P 105 N 47 P 48 N 6.5 P 6.5 N 1 P 1.1 N 2.3 P 2.1 TEST CONDITIONS CH. S VGS = 0V, ID = 250mA VGS = 0V, ID = -250mA VDS = VGS, ID = 250mA VDS = -5V, VGS = -10V V nA mA A RDS(ON) gfs VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 ° C VDS = -20V, VGS = 0V, TJ = 55 ° C VDS = 5V, ID = 3.5A VGS = 10V, ID = 3.5A DYNAMIC VDS = VGS, ID = -250mA VGS = 4.5V, ID = 2A VDS = 5V, VGS = 10V mΩ VDS = 0V, VGS = ± 20V VDS = 0V, VGS = ± 20V SYMBOL N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz pF nC Crss Input Capacitance Ciss Coss VGS = -4.5V, ID = -1.5A VGS = -10V, ID = -2.3A VDS = -5V, ID = -2.3A VGS(th) IGSS IDSS Drain-Source Breakdown Voltage V(BR)DSS STATIC LIMITS UNITPARAMETER On-State Drain Current1 Reverse Transfer Capacitance Qg N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3.5A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -2.3A Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Output Capacitance Qgs Qgd Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Ver 1.0 2 2012/4/12

N&P-Channel Enhancement Mode MOSFET N 7 P 7 N 10 P 10 N 10 P 17 N 4 P 6 N 3 P -2 N 1.3 P -1.3 N 12.7 P 12.4 N 6 P 5 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. trr Qrr Continuous Current Forward Voltage1 Reverse Recovery Time nS N-Channel VDS = 15V ID @ 3.5A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V ID @ -2.3A, VGS = -10V, RGEN = 6 Ω Reverse Recovery Charge IS td(on) tr td(off) tf Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 DYNAMIC Rise Time2 VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 3.5A, dlF/dt = 100A / mS IF = -2.3A, dlF/dt = 100A / mS IF = 2.3A, VGS = 0V IF = -2.1A, VGS = 0V A V nS nC Ver 1.0 3 2012/4/12

N&P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/12

N&P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/12

N&P-Channel Enhancement Mode MOSFET Ver 1.0 6 2012/4/12

N&P-Channel Enhancement Mode MOSFET Ver 1.0 7 2012/4/12

N&P-Channel Enhancement Mode MOSFET Ver 1.0 8 2012/4/12