P5506BDG UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. LIMITS -55 to 150 W UNITS A MAXIMUM RqJA TC = 25 ° C ID IDMPulsed Drain Current1 Operating Junction & Storage Temperature Range TYPICAL SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 55mΩ @VGS = 10V 22A ID 60V Continuous Drain Current SYMBOL PD TJ, TSTG TC = 25 ° C TC = 100 ° C Junction-to-Case Junction-to-Ambient Power Dissipation RqJC Lead Temperature (1/16" from case for 10 sec.) TL 275 2.5 Drain-Source Voltage VDS V60 ± 20VGS ° C / W THERMAL RESISTANCE Ver 1.1 1 2013-3-25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.0 1.5 2.5 ± 250 nA 22 A 59 75 42 55 14 S 587 12.5 1.8 3.7 22 A 1 V 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. PARAMETER SYMBOL DYNAMIC V IGSS IDSS gfs VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V mA Drain-Source Breakdown Voltage VGS = 4.5V, ID = 8A VDS = 10V, ID = 10A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage pF Ciss Coss Qg VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A Qgd Qgs Crss On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V Drain-Source On-State Resistance1 RDS(ON) IF = 1A, VGS = 0V Input Capacitance Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz VGS = 10V, ID = 10A Gate Threshold Voltage IS VSD Fall Time2 Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) LIMITS UNITSTEST CONDITIONS Total Gate Charge2 nSVDD = 30V, ID@ 1A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf nC mΩ STATIC Ver 1.1 2 2013-3-25

N-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-25

N-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-25

N-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-25