P5506BDA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. V Junction-to-Ambient RqJA 62.5 ° C / W Power Dissipation PD TJ, TSTG TC = 25 ° C TC = 100 ° C THERMAL RESISTANCE ID 60V Continuous Drain Current SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 55mΩ @VGS = 10V 15A TYPICALSYMBOL Junction-to-Case RqJC 4.5 W UNITS 9.5 V± 20 A TC = 25 ° C ID IDMPulsed Drain Current1 LIMITS VGS Drain-Source Voltage VDS Avalanche Engergy L = 0.1 mH Avalanche Current IAS 14.7 -55 to 150Junction & Storage Temperature Range EAS 10.8 MAXIMUM mJ Rev 1.0 1 2018/9/6

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 49 72 43 55 20 S 376 1.6 Ω 1.2 3.9 9.5 15 A 1.2 V 18 nS 7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. nSVDS = 30V, ID @ 10A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tfFall Time2 Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) LIMITS UNITS Gate-Source Charge2 Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Gate Resistance Drain-Source On-State Resistance1 DYNAMIC pF Total Gate Charge2 Qg(VGS = 4.5V) IF = 10A, VGS = 0V STATIC nC mΩ VSD Input Capacitance Output Capacitance Gate Threshold Voltage IS Gate-Drain Charge2 Ciss Coss RDS(ON) Qg(VGS = 10V) VDS = 30V, VGS = 10V, ID = 10A Qgd Qgs Crss Rg VGS = 0V, VDS = 0V, f = 1MHZ mA Drain-Source Breakdown Voltage VGS = 4.5V, ID = 8A VDS = 5V, ID = 10A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current IDSS gfs VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V VGS = 10V, ID = 10A V IGSS TEST CONDITIONS Gate-Body Leakage Reverse Recovery Time PARAMETER SYMBOL Reverse Recovery Charge trr IF = 10A, dlF/dt = 100A / msQrr Rev 1.0 2 2018/9/6

N-Channel Enhancement Mode MOSFET Rev 1.0 3 2018/9/6

N-Channel Enhancement Mode MOSFET Rev 1.0 4 2018/9/6

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 Rev 1.0 5 2018/9/6

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel Rev 1.0 6 2018/9/6

N-Channel Enhancement Mode MOSFET Rev 1.0 7 2018/9/6

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) Rev 1.0 8 2018/9/6