P5504EVG

P5504EVG UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% LIMITS V A W THERMAL RESISTANCE RqJL ° C / WRqJA SYMBOL PD TJ, TSTG UNITS -20 -4.8 ± 25 ID IDM SYMBOL VGS VDS 3.1 -55 to 150 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID -40 -40V Continuous Drain Current TA = 25 ° C 55mΩ @VGS = -10V Pulsed Drain Current1 -6A Operating Junction & Storage Temperature Range TL 275 TA = 25 ° C TA = 70 ° C Power Dissipation MAXIMUMTYPICAL Junction-to-Ambient Junction-to-Lead 25 Lead Temperature (1/16" from case for 10 sec.) Ver 1.0 1 2012/4/16

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -40 -1 -1.5 -2.5 ± 250 nA -20 A 65 94 38 55 11 S 690 310 2.2 1.9 6.7 13.4 9.7 19.4 19.8 35.6 12.3 22.2 -1.3 A -1 V 15.5 nS 7.9 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = -30V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V Zero Gate Voltage Drain Current mA IGSS IDSS Drain-Source Breakdown Voltage VGS(th) Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = -5.5A, dlF/dt = 100A / mS Forward Transconductance1 gfs VDS = -10V, ID = -5.5A TEST CONDITIONS STATIC LIMITS UNIT VGS = 0V, ID = -250mAV(BR)DSS Gate-Body Leakage mΩDrain-Source On-State Resistance1 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz pFOutput Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, ID = -5.5A, VGS = -10V nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Turn-On Delay Time2 td(on) VDD = -20V, ID = -1A, VGS = -10V, RGS=6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Forward Voltage1 VSD IF = -5.5A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS VGS = -10V, ID = -5.5ARDS(ON) VGS = -4.5V, ID = -4.5A V VDS = -32V, VGS = 0V PARAMETER SYMBOL On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V Gate Threshold Voltage Ver 1.0 2 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16