P5503QV UNIKC | Alldatasheet

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N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V -30V SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P N P N P TA = 70 ° C Pulsed Drain Current1 mJ W VGS Drain-Source Voltage VDS -55 to 150 PD -20 Tj, Tstg ID -30 ± 20Gate-Source Voltage Channel N P SYMBOL -4.5A60mΩ @VGS = -10V 7.5A22mΩ @VGS =10V RDS(ON) PARAMETERS/TEST CONDITIONS Continuous Drain Current UNITS ± 20 7.5 LIMITS V -3.6 Avalanche Current IAS A -21 L = 0.1mH TA = 25 ° C EAS Power Dissipation -4.5ID IDM TA = 25 ° C TA = 70° C Avalanche Energy 1.28 Junction & Storage Temperature Range REV 1.0 1 2014/8/29

N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX N 30 P -30 N 1.7 2.2 3 P -1.7 -2.2 -3 N ± 100 P ± 100 N 1 P -1 N 10 P -10 N 30 P -20 N 26 45 P 72 100 N 15 22 P 40 60 N 20 P 10 ° C / W MAXIMUM Junction-to-Case RqJC 35 STATIC A VGS = 4.5V, ID = 4.5A TEST CONDITIONS VDS =20V, VGS = 0V, TJ = 55 ° C SYMBOL TYPICAL UNITSPARAMETER Drain-Source Breakdown Voltage V(BR)DSS VDS = -5V, VGS = -10V V nA mA gfs mΩ VDS = 0V, VGS = ± 20V VGS = 10V, ID = 5.5A VGS = 0V, ID = -250mA Forward Transconductance1 ID(ON) VDS = -10V, ID = -4.5A S VGS = -4.5V, ID = -3.5A VDS = 10V, ID = 5.5A Drain-Source On-State Resistance1 VDS = 0V, VGS = ± 20V THERMAL RESISTANCE Gate-Body Leakage VDS = -20V, VGS = 0V, TJ = 55 ° C On-State Drain Current1 IDSS VDS = VGS, ID = -250mA RqJA VGS = 0V, ID = 250mA VDS = 24V, VGS = 0V VDS = -24V, VGS = 0VZero Gate Voltage Drain Current CH.SYMBOL Junction-to-Ambient Gate Threshold Voltage 62.5 LIMITS VGS = -10V, ID = -4.5A VDS = 5V, VGS = 10V VDS = VGS, ID = 250mAVGS(th) IGSS RDS(ON) REV 1.0 2 2014/8/29

N&P-Channel Enhancement Mode MOSFET N 554 P 722 N 146 P 137 N 84 P 92 N 2.1 P 6.7 N 11 P 13.5 N 5 P 6 N 2.3 P 3 N 2.2 P 2.4 N 10 P 12 N 10 P 12 N 22 P 30 N 10 P 14 N 7.5 P -4.5 N 1 P -1 N 30 P 36 N 19 P 21 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Qg(VGS = 10V) Qg(VGS = 4.5V) N-Channel IF = 5.5A, dlF/dt = 100A / mS P-Channel IF = -4.5A, dlF/dt = 100A / mS nS trr Rise Time2 Gate-Drain Charge2 VSD Qrr Continuous Current Reverse Recovery Time Total Gate Charge2 Reverse Recovery Charge IS tr Output Capacitance Coss DYNAMIC N-Channel VDS = 15V ID @ 5.5A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V,RL = 1Ω ID @ -4.5A, VGS = -10V, RGEN = 6 Ω td(on) nC IF = -4.5A, VGS = 0V A Qgd td(off) tf Turn-On Delay Time2 nC V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Gate-Source Charge2 nS Turn-Off Delay Time2 Fall Time2 Forward Voltage1 IF = 5.5A, VGS = 0V Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω Input Capacitance Reverse Transfer Capacitance Crss Ciss Qgs pF N-Channel VDS = 0.5V(BR)DSS, ID = 5.5V, P-Channel VDS = 0.5V(BR)DSS, ID = -4.5A N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz REV 1.0 3 2014/8/29

N&P-Channel Enhancement Mode MOSFET N-CHANNEL REV 1.0 4 2014/8/29

N&P-Channel Enhancement Mode MOSFET REV 1.0 5 2014/8/29

N&P-Channel Enhancement Mode MOSFET P-CHANNEL REV 1.0 6 2014/8/29

N&P-Channel Enhancement Mode MOSFET REV 1.0 7 2014/8/29

N&P-Channel Enhancement Mode MOSFET REV 1.0 8 2014/8/29