P5103EMA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Limited by maximum junction temperature. PD TJ, TSTG Junction & Storage Temperature Range SYMBOL °C-55 to 150 RqJA 117Junction-to-Ambient2 ID -30V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 51mΩ @VGS = -10V TA = 25 ° C -3.8A SYMBOL VDS Pulsed Drain Current1 THERMAL RESISTANCE VGS -3.8 LIMITS ID IDM TYPICAL 0.7 MAXIMUM W UNITS -20 ± 20 V A -30 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. REV 1.0 1 2014/4/24

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1 -1.8 -3 ± 100 nA -10 65 85 41 51 7 S 562 13.3 6.9 1.9 3.5 110 -0.9 A -1.1 V 13.2 nS 6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Fall Time2 Qg(VGS=10V) Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 Rise Time2 IF = -3.8A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) VDS = -15V ID @ -3.8A, VGS= -10V, RGEN = 6Ω nC nS RDS(ON) tf VDS = -5V, ID = -3.8A VDS = -15V, ID= -3.8A pF Crss Turn-Off Delay Time2 Gate-Source Charge2 VGS = -10V, ID = -3.8A STATIC LIMITS mΩ UNIT Drain-Source On-State Resistance1 PARAMETER TEST CONDITIONS Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance VGS(th) VGS = 0V, ID = -250mA SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = -15V, f = 1MHz VGS = -4.5V, ID = -3.5A Zero Gate Voltage Drain Current V(BR)DSS mAVDS = -20V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = -250mA Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = -24V, VGS = 0V Gate Threshold Voltage VDS = 0V, VGS = ± 20V Total Gate Charge2 Qg(VGS=4.5V) Reverse Recovery Time trr IF = -3.8A, dlF/dt = 100A /mS Reverse Transfer Capacitance V IGSS IDSS REV 1.0 2 2014/4/24

P-Channel Enhancement Mode MOSFET REV 1.0 3 2014/4/24

P-Channel Enhancement Mode MOSFET REV 1.0 4 2014/4/24

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/4/24