P5103EAG

P5103EAG UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ° C / W Junction-to-Ambient t≦5sec Junction-to-Ambient Steady State Junction-to-Lead PD TJ, TSTG RqJA RqJLSteady State Operating Junction & Storage Temperature Range SYMBOL -30V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current TA = 25 ° C VDS Pulsed Drain Current1 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Drain-Gate Voltage (RGS=20KΩ） 51mΩ @VGS = -10V -5A ID RqJA 62.5 110 VDG W MAXIMUMTHERMAL RESISTANCE LIMITS ID IDM TYPICAL 1.4 2.0 -55 to 150 SYMBOL Gate-Source Voltage VGS ± 20 UNITS -20 -4.2 -30 V A -30 Ver 1.0 1 2012/9/26

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1.00 -1.80 -3.00 ± 100 nA -10 -20 A 66 85 42 51 10 S 700 120 12.5 2.1 3.5 -1 V 13.4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Reverse Recovery Charge Qrr IF = -1A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TC = 25 ° C ) Fall Time2 Qg Qgs Qgd td(on) tr td(off) VDS = -15V ID @ -1A, VGEN = -10V, RGS = 6Ω tf Rise Time2 Turn-Off Delay Time2 Total Gate Charge2 Gate-Source Charge2 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A nC nS Gate-Drain Charge2 VDS = -5V, VGS = -10V Turn-On Delay Time2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss VDS = -10V, ID = -5A STATIC LIMITS UNITPARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage VGS = -4.5V, ID = -4A VDS = -20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mAVGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage VGS = 0V, VDS = -10V, f = 1MHz pF Ciss Coss mA VDS = -24V, VGS = 0V On-State Drain Current1 ID(ON) gfs VGS = -10V, ID = -5A mΩ VDS = 0V, VGS = ± 20V A Pulsed Current3 ISM DYNAMIC V IGSS IDSS RDS(ON) Drain-Source On-State Resistance1 Ver 1.0 2 2012/9/26

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/9/26

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/9/26

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/9/26