P5102FMNV UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Limited by maximum junction temperature. Junction-to-Ambient SYMBOL RqJA 120 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 45mΩ @VGS = -4.5V -3.5A ID -20V VDS Pulsed Drain Current1 TA = 25 ° C TA = 70 ° C Power Dissipation VGS -3.5 W Continuous Drain Current TA = 25 ° C THERMAL RESISTANCE ID IDM TYPICAL 0.6 1.0 Operating Junction & Storage Temperature Range SYMBOL MAXIMUM °C-55 to 150 PD TJ, TSTG UNITS -21 -2.8 ±8 V A -20 LIMITS REV 1.0 1 2015/5/4

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.45 -0.6 -0.9 ± 100 nA -10 60 71 48 55 40 45 -21 A 17 S 1180 185 117 16.7 1.8 4.6 -3.5 A -1.3 V 30 nS 14 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = -3.5A, VGS = 0V On-State Drain Current1 ID(ON) VDS = -5V, VGS = -4.5V IGSS VGS = -2.5V, ID = -3.5A STATIC LIMITS VDS = -10V, VGS = -4.5V, ID = -3.5A Reverse Recovery Time trr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Qg Qgs Qgd td(on) VDS = -10V ID @ -3.5A, VGS = -4.5V, RGEN = 3.3Ω Continuous Current Forward Voltage1 IS VSD nC nS tr Total Gate Charge2 Gate-Source Charge2 Forward Transconductance1 gfs mΩ td(off) tf Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 UNITSPARAMETER SYMBOL TEST CONDITIONS Reverse Recovery Change Qrr IF = -3.5A, dlF/dt = 100A / mS VGS = 0V, VDS = -10V, f = 1MHz VGS = -1.8V, ID = -2A mA VGS(th) VGS = 0V, ID = -250mAV(BR)DSS Gate Threshold Voltage Drain-Source Breakdown Voltage V VDS = -5V, ID = -3.5A Crss RDS(ON) Drain-Source On-State Resistance1 pF Ciss Coss DYNAMIC Gate-Body Leakage VDS = -16V, VGS = 0V VGS = -4.5V, ID = -3.5A Input Capacitance Output Capacitance Reverse Transfer Capacitance IDSS VDS = -10V, VGS = 0V , TJ = 70 ° C VDS = 0V, VGS = ± 8V Zero Gate Voltage Drain Current VDS = VGS, ID = -250mA REV 1.0 2 2015/5/4

P-Channel Enhancement Mode MOSFET REV 1.0 3 2015/5/4

P-Channel Enhancement Mode MOSFET REV 1.0 4 2015/5/4

P-Channel Enhancement Mode MOSFET REV 1.0 5 2015/5/4