P5010AT

P5010AT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL Power Dissipation RqJC 1.3 30A ID TC = 25 ° C 100V Continuous Drain Current TJ, TSTG EASL = 0.1mH PD TC = 25 ° C RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 50mΩ @VGS = 10V mJ W Avalanche Energy UNITS ID IDM SYMBOL LIMITS A V± 20VGS Pulsed Drain Current1 Avalanche Current IAS 37 -55 to 150 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL Drain-Source Voltage VDS 100 Ver 1.0 1 2012/4/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 2 3 4 ± 100 nA 70 A 39 50 mΩ 10 S 1723 173 120 2.2 Ω 130 30 A 1.2 V 72 nS 206 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. STATIC LIMITS UNITPARAMETER TEST CONDITIONS Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Output Capacitance IF = 15A, VGS = 0V nSVDD = 50V, ID @ 15A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf Gate-Drain Charge2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance nC Drain-Source Breakdown Voltage VGS = 10V, ID = 15A VDS = 10V, ID = 15A VGS(th) Forward Transconductance1 Qg VDS = 50V, VGS = 10V, ID = 15A Ciss Coss Crss Qgd mA ID(ON) Gate Threshold Voltage VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Qgs VGS = 0V, VDS = 25V, f = 1MHz Rg IF = 15A, dlF/dt = 100A / μS pF VDS = 80V, VGS = 0V IGSS IDSS VDS = 0V, VGS = ± 20V gfs DYNAMIC Drain-Source On-State Resistance1 RDS(ON) VDS = 10V, VGS = 10V VGS = 0V, VDS = 0V, f = 1MHz On-State Drain Current1 VDS = 80V, VGS = 0V , TJ = 125 ° C SYMBOL Input Capacitance Ver 1.0 2 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16