P5003QVT UNIKC | Alldatasheet

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N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V -30V SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P 2.5 1.6 Power Dissipation TA = 25 ° C TA = 70° C Junction & Storage Temperature Range IDM A UNITS ± 20 LIMITS V 45mΩ @VGS = -10V 10A27.5mΩ @VGS =10V RDS(ON) PARAMETERS/TEST CONDITIONS -30 ± 20 SYMBOL Continuous Drain Current -7A ID Gate-Source Voltage Channel N P VGS Drain-Source Voltage VDS -55 to 150 PD -20 Tj, Tstg TA = 25 ° C Pulsed Drain Current1 ID W TA = 70 ° C REV 1.0 1 2014/9/30

N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX N 30 P -30 N 1 1.5 2.5 P -1 -1.5 -2.5 N ± 100 P ± 100 N 1 P -1 N 10 P -10 N 20 P -20 N 30 40 P 62 80 N 20.5 27.5 P 37.5 45 N 16 P 13 Junction-to-Case RqJC 30 ° C / W TYPICAL IGSS RDS(ON) VGS = -10V, ID = -5A ID(ON) Forward Transconductance1 VDS = -5V, ID = -5A Drain-Source On-State Resistance1 VDS = -5V, VGS = -10V nA mA VDS = 5V, VGS = 10V VDS = 0V, VGS = ± 20V VGS = -4.5V, ID = -4A VDS = 5V, ID = 7A Gate-Body Leakage VDS = -20V, VGS = 0V, TJ = 55 ° C On-State Drain Current1 Junction-to-Ambient Gate Threshold Voltage VDS = VGS, ID = 250mAVGS(th) LIMITS IDSS VDS = VGS, ID = -250mA RqJA VGS = 0V, ID = 250mA VDS = 24V, VGS = 0V VDS = -24V, VGS = 0VZero Gate Voltage Drain Current CH. THERMAL RESISTANCE VGS = 0V, ID = -250mA SYMBOL SYMBOL gfs mΩ VDS = 0V, VGS = ± 20V VGS = 10V, ID = 7A A VGS = 4.5V, ID = 6A S VDS =20V, VGS = 0V, TJ = 55 ° C UNITSPARAMETER Drain-Source Breakdown Voltage V(BR)DSS STATIC TEST CONDITIONS MAXIMUM V REV 1.0 2 2014/9/30

N&P-Channel Enhancement Mode MOSFET N 680 P 780 N 105 P 145 N 75 P 79 N 14 P 15.1 N 1.9 P 2.1 N 3.3 P 4.0 N 1.7 2.5 P 3.5 6 N 4.6 7 P 7.7 11.5 N 4 6 P 5.7 8.5 N 20 30 P 20 30 N 5 8 P 9.5 14 N 1.3 P -1.3 N 1 P -1 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz Coss DYNAMIC Input Capacitance Reverse Transfer Capacitance Crss Ciss Forward Voltage1 Qg tf Turn-On Delay Time2 td(on) Qgd VSD Qgs Continuous Current td(off)Turn-Off Delay Time2 Fall Time2 N-Channel VDS = 0.5V(BR)DSS,VGS = 10V, ID = 7A, P-Channel VDS = 0.5V(BR)DSS,VGS = -10V, ID = -5A V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Gate-Source Charge2 IF = -1A, VGS = 0V A N-Channel VDD = 10V ID @ 1A, VGS = 10V, RGEN = 3Ω P-Channel VDD = -10V, ID @ -1A, VGS = -10V, RGEN = 3Ω IF = 1A, VGS = 0V nS nC pF Rise Time2 Gate-Drain Charge2 Total Gate Charge2 IS tr Output Capacitance Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz Ω REV 1.0 3 2014/9/30

N&P-Channel Enhancement Mode MOSFET N-CHANNEL REV 1.0 4 2014/9/30

N&P-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/30

N&P-Channel Enhancement Mode MOSFET P-CHANNEL REV 1.0 6 2014/9/30

N&P-Channel Enhancement Mode MOSFET REV 1.0 7 2014/9/30

N&P-Channel Enhancement Mode MOSFET REV 1.0 8 2014/9/30