P45N02LDG

P45N02LDG UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited by package, Duty cycle  1%. LIMITS °C-55 to 150 mJ W UNITS 110 A IAS Operating Junction & Storage Temperature Range TYPICAL MAXIMUM 27EAS TC = 25 ° C ID IDMPulsed Drain Current2 Avalanche Current 3.6 Junction-to-Ambient RqJA Junction-to-Case SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 20mΩ @VGS = 10V 32A ID 25V Continuous Drain Current1 Power Dissipation SYMBOL PD TJ, TSTG TC = 25 ° C Avalanche Energy L = 0.1mH THERMAL RESISTANCE RqJC TC = 100 ° C Drain-Source Voltage VDS V25 ± 20VGS Case-to-Heatsink RqCS 0.7 ° C / W Ver 1.1 1 2013-3-13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.0 1.8 2.5 ± 250 nA 250 110 A 29 41 14 20 19 S 492 221 187 1.5 Ω 14.7 7.7 2.3 5.6 25 A 1.4 V 27 nS 36 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. PARAMETER SYMBOL VDS = 20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20VIGSS IDSS gfs Crss VDS = 20V, VGS = 0V V(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Qgd Qgs RDS(ON) Gate Threshold Voltage DYNAMIC V VGS = 0V, VDS = 0V, f = 1MHz Qg(VGS=10V) VDS = 15V, ID = 15A mA Drain-Source Breakdown Voltage VGS = 4.5V, ID = 10A VDS = 5V, ID = 15A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mA On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V Drain-Source On-State Resistance1 nC VGS = 0V, VDS = 15V, f = 1MHz pF Ciss Coss Rg Input Capacitance Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QrrReverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 15A, VGS = 0V trr IS VSD Fall Time2 Forward Voltage1 VGS = 10V, ID = 15A STATIC LIMITS UNITTEST CONDITIONS nSVDD = 15V, ID@ 15A, VGS = 10V, RGS = 6Ω td(on) tr td(off) tf mΩ Reverse Recovery Time Total Gate Charge2 Qg(VGS = 4.5V) IF = 15A, dlF/dt = 100A / mS Ver 1.1 2 2013-3-13

N-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-13

N-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-13

N-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-13