P4506BV

P4506BV UNIKC | Alldatasheet

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N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Pulsed Drain Current1 Avalanche Current PD Operating Junction & Storage Temperature Range -55 to 150Tj, Tstg RqJA PARAMETERS/TEST CONDITIONS RDS(ON) 45mΩ @VGS = 10V 5.5A Gate-Source Voltage TA =70 ° CPower Dissipation L = 0.1mH TA= 25 ° C ID TA = 25 ° C 60V Continuous Drain Current TA = 70 ° C W UNITS 4.5 26 mJ SYMBOL 5.5 LIMITS A VGS ID V SYMBOL ± 20 IDM EAS THERMAL RESISTANCE Avalanche Energy TYPICAL 1.6 2.5 IAS MAXIMUM Junction-to-Case SOP-8 RqJC 25 ° C / WJunction-to-Ambient 50 REV 1.0 1 2014/12/2

N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.5 3 ± 100 nA 30 A 46 65 40 45 16 S 969 103 1.6 Ω 3.6 7.5 188 5.5 A 1.3 V 29.5 nS 25 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Charge trr Qrr IF = 5.5A, dlF/dt = 100A /mS Total Gate Charge2 VDS = 0.5V(BR)DSS, VGS = 10V, ID =5.5A Qgd IF = 5.5A, VGS = 0V Gate Threshold Voltage VDS = VGS, ID = 250mA Reverse Recovery Time mΩ VGS = 4.5V, ID = 4.5A SYMBOL UNITS Zero Gate Voltage Drain Current VGS = 0V, ID = 250mA mAVDS = 40V, VGS = 0V, TC = 125 ° C PARAMETER Gate-Body Leakage Output Capacitance Qg Forward Transconductance1 Ciss VDS = 5V, ID = 5.5A Input Capacitance gfs Gate Resistance VGS = 0V, f = 1MHzRg VGS = 10V, ID = 5.5A Drain-Source On-State Resistance1 RDS(ON) LIMITS VGS(th) IGSS Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS nSVDS = 30V,ID @ 5.5A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr Continuous Current td(off) tf Turn-On Delay Time2 Rise Time2 Forward Voltage1 IS VSD pF nCQgs STATIC Drain-Source Breakdown Voltage V DYNAMIC Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VDS = 0V, VGS = ± 20V IDSS Coss Crss VDS = 48V, VGS = 0V VGS = 0V, VDS = 25V, f = 1MHz On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V REV 1.0 2 2014/12/2

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 3 2014/12/2

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 4 2014/12/2

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/12/2