P4404QV UNIKC | Alldatasheet

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N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V -40V SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P N P mJAvalanche Energy L = 0.1mH EAS W TA = 70 ° C PD -20 Tj, Tstg TA = 25 ° C Pulsed Drain Current1 IDContinuous Drain Current -5A ID Gate-Source Voltage Channel N P44mΩ @VGS = -10V 7A28mΩ @VGS =10V RDS(ON) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDS V -40 ± 20 VGS -55 to 150 UNITS ± 20 LIMITS A TL TA = 25 ° C TA = 70° C Junction & Storage Temperature Range IDM Lead Temperature (1/16” from case for 10 sec.) Power Dissipation 1.3 275 °C REV 1.0 1 2014/10/24

N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX N 40 P -40 N 1.8 2.3 3.0 P -1.8 -2.3 -3.0 N ± 100 P ± 100 N 1 P -1 N 10 P -10 N 25 P -20 N 30 42 P 57 68 N 21 28 P 38 44 N 19 P 11 UNITSPARAMETER Drain-Source Breakdown Voltage V(BR)DSS STATIC TEST CONDITIONS MAXIMUM V VDS =30V, VGS = 0V, TJ = 55 ° C A VGS = 4.5V, ID = 6A S mΩ VDS = 0V, VGS = ± 20V VGS = 10V, ID = 7A gfs CH. THERMAL RESISTANCE VGS = 0V, ID = -250mA SYMBOL SYMBOL VGS(th) LIMITS IDSS VDS = VGS, ID = -250mA RqJA VGS = 0V, ID = 250mA VDS = 32V, VGS = 0V VDS = -32V, VGS = 0VZero Gate Voltage Drain Current VDS = 10V, ID = 7A Gate-Body Leakage VDS = -30V, VGS = 0V, TJ = 55 ° C On-State Drain Current1 Junction-to-Ambient Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = -5V, VGS = -10V nA mA VDS = 5V, VGS = 10V VDS = 0V, VGS = ± 20V VGS = -4.5V, ID = -12A IGSS RDS(ON) VGS = -10V, ID = -18A ID(ON) Forward Transconductance1 VDS = -10V, ID = -5A Drain-Source On-State Resistance1 Junction-to-Lead RqJL 31 ° C / W 62.5 TYPICAL REV 1.0 2 2014/10/24

N&P-Channel Enhancement Mode MOSFET N 747 P 845 N 169 P 181 N 105 P 123 N 1.47 P 5.13 N 16.7 P 17.8 N 2.3 P 3.6 N 5.5 P 6 N 2.2 4.4 P 6 13.4 N 7.5 15 P 9.2 19.4 N 11.8 21.3 P 19.2 35.6 N 3.7 7.4 P 11.8 22.2 N 7 P -5 N 25 P -20 N 1.3 P -1.3 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Total Gate Charge2 IS tr Output Capacitance Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Pulsed Current3 ISM Rise Time2 Gate-Drain Charge2 nS nC pF A N-Channel VDS = 20V ID @ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -20V,RL = 1Ω ID @ -1A, VGS = -10V, RGEN = 6Ω IF = IS, VGS = 0V td(off)Turn-Off Delay Time2 Fall Time2 N-Channel VDS = 0.5V(BR)DSS,VGS = 10V, ID = 7A, P-Channel VDS = 0.5V(BR)DSS,VGS = -10V, ID = -5A V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 ° C) Gate-Source Charge2 IF = IS, VGS = 0VForward Voltage1 Qg tf Turn-On Delay Time2 td(on) Qgd VSD Qgs Continuous Current Input Capacitance Reverse Transfer Capacitance Crss Ciss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz Coss DYNAMIC Ω REV 1.0 3 2014/10/24

N&P-Channel Enhancement Mode MOSFET N-CHANNEL REV 1.0 4 2014/10/24

N&P-Channel Enhancement Mode MOSFET REV 1.0 5 2014/10/24

N&P-Channel Enhancement Mode MOSFET P-CHANNEL REV 1.0 6 2014/10/24

N&P-Channel Enhancement Mode MOSFET REV 1.0 7 2014/10/24

N&P-Channel Enhancement Mode MOSFET REV 1.0 8 2014/10/24